參數(shù)資料
型號： M69AW048BL70ZB8
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit (2M x16) 3V Asynchronous PSRAM
中文描述： 32兆位（200萬× 16）3V的異步移動存儲芯片
文件頁數(shù)： 1/29頁
文件大?。?/td> 433K
代理商： M69AW048BL70ZB8
1/29
November 2004
M69AW048B
32 Mbit (2M x16) 3V Asynchronous PSRAM
FEATURES SUMMARY
SUPPLY VOLTAGE: 2.7 to 3.3V
ACCESS TIMES: 70ns
LOW STANDBY CURRENT: 100μA
DEEP POWER-DOWN CURRENT: 10μA
BYTE CONTROL: UB/LB
PROGRAMMABLE PARTIAL ARRAY
COMPATIBLE WITH STANDARD LPSRAM
TRI-STATE COMMON I/O
8 WORD PAGE ACCESS CAPABILITY: 18ns
WIDE OPERATING TEMPERATURE
– T
A
= –30 to +85°C
POWER-DOWN MODES
– Deep Power-Down
– 4 Mbit Partial Array Refresh
– 8 Mbit Partial Array Refresh
– 16 Mbit Partial Array Refresh
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Figure 1. Package
FBGA
TFBGA48 (ZB)
6x8 mm
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