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參數(shù)資料
| 型號： | M6MGD13TW34DWG |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM |
| 中文描述： | 134217728位（8388608字由16位）的CMOS閃存 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 130K |
| 代理商： | M6MGD13TW34DWG |
M6MGD13TW34DWG
RENESAS LSIs
Rev.1.0.48a_bezc
1
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY &
33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
Stacked-CSP ( Chip Scale Package)
The M6MGD13TW34DWG is a Stacked Chip Scale Package
(S-CSP) that contents 128M-bit Flash memory and 32M-bit
Mobile RAM in a 72-pin Stacked CSP for lead free use.
128M-bit Flash memory is a 8,388,608 words, single power
supply and high performance non-volatile memory fabricated
by CMOS technology for the peripheral circuit and DINOR IV
(Divided bit-line NOR IV) architecture for the memory cell. All
memory blocks are locked and can not be programmed or
erased, when F-WP# is Low. Using Software Lock Release
function, program or erase operation can be executed.
32M-bit Mobile RAM is a 2,097,152 words high density RAM
fabricated by CMOS technology for the peripheral circuit and
DRAM cell for the memory array. The interface is compatible
to an asynchronous SRAM.
The cells are automatically refreshed and the refresh control
is not required for system. The device also has the partial
block refresh scheme and the power down mode by writing
the command.
The M6MGD13TW34DWG is suitable for a high performance
cellular phone and a mobile PC that are required to be small
mounting area, weight and small power dissipation.
Access Time
Flash
70ns (Max.)
Mobile RAM
80ns (Max.)
Supply Voltage
FM-VCC=2.7 ~ 3.0V
Ambient Temperature
Ta= -40 ~ 85 degree
Package
72pin S-CSP,
Ball pitch 0.80mm
Outer-ball:Sn-Ag-Cu
Application
Mobile communication products
A0-A20 : Common address for Flash/Mobile RAM
F-A21 : Address for Flash
DQ0-DQ15 : Data I/O
F-CE1# : Flash chip enable 1
F-CE2# : Flash chip enable 2
F-OE# : Output enable for Flash Memory
F-WE# : Write enable for Flash Memory
M-CE# : Mobile RAM chip enable
M-OE# : Output enable for Mobile RAM
M-WE# : Write enable for Mobile RAM
M-LB# : Lower byte control for Mobile RAM
M-UB# : Upper byte control for Mobile RAM
NC : Non Connection
DU : Don’t Use
F-WP# : Write protect for Flash
F-RY/BY# : Flash Memory Ready /Busy
F-RP# : Reset power down for Flash
Description
Features
FM-VCC : VCC for Flash / Mobile RAM
GND
: GND for Flash / Mobile RAM
PIN CONFIGURATION (TOP VIEW)
INDEX(Laser Marking)
1
DQ15
RYF-
GND
FM-
VCC
F-
OE#
GND
F-
CE1#
DQ1
DQ3
DQ5
DQ7
DQ14
DQ4
DQ2
DQ0
A1
A0
A2
A3
A6
DQ8
DQ9
DQ11
DQ10
DQ12
DQ6
DQ13
A9
A14
A13
A12
F-
A4
A7
A10
A15
A5
A8
A11
DU
DU
F-
WE#
GND
F-
WP#
M-
LB#
DU
DU
(Top View)
1
2
3
4
5
6
7
8
A
B
C
D
E
F
G
H
J
K
L
M
8.5 mm
A18
A17
A16
A19
M-
UB#
A20
NC
F-
CE2#
NC
NC
NC
M-
OE#
DU
DU
DU
DU
NC
M-
WE#
DU
DU
M-
CE#
DU
DU
DU
F-
A21
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M6MGD13TW66CWG-P | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM |
| M6MGT160S2BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGT160S4BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGT162S2BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP |
| M6MGT162S4BVP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY |
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