參數(shù)資料
型號： M7020R-083ZA1T
廠商： 意法半導(dǎo)體
英文描述： 32K x 68-bit Entry NETWORK SEARCH ENGINE
中文描述： 32K的× 68位進(jìn)入網(wǎng)絡(luò)搜索引擎
文件頁數(shù)： 33/150頁
文件大?。?/td> 996K
代理商： M7020R-083ZA1T
33/150
M7020R
Table 20. READ Address Format for Internal Registers
Table 21. READ Address Format for Data and Mask Arrays
WRITE COMMAND
The WRITE can be a single write of a data array,
mask array, register, or external SRAM location
(CMD[2] = 0). It can be a burst WRITE
(CMD[2] = 1) using an internal auto-incrementing
address register (WBURADR) of the data array or
mask array locations. A single-location WRITE is a
three-cycle operation, shown in Figure 17, page
34. The burst WRITE adds one extra cycle for
each successive WRITE.
The WRITE operation sequence is as follows:
–
Cycle 1A:
The host ASIC applies the WRITE In-
struction on the CMD[1:0] (CMD[2] = 0), using
CMDV=1 and the address supplied on the DQ
Bus, as shown in Table 22, page 35. The host
ASIC also supplies the index to the global mask
register to mask the write to the data array or
mask array location in CMD[5:3]. For SRAM
WRITEs, the host ASIC must supply the
SADR[21:20] on CMD[8:6]. The host ASIC sets
CMD[9] to '0' for the normal WRITE.
–
Cycle 1B:
The host ASIC continues to apply the
WRITE
Instruction
(CMD[2] = 0), using CMDV = 1 and the address
supplied on the DQ Bus. The host ASIC contin-
ues to supply the global mask register index to
mask the WRITE to the data or mask array loca-
tions in CMD[5:3]. The host ASIC selects the
device where ID[4:0] matches the DQ[25:21]
lines, or it selects all the devices when
DQ[25:21] = 11111.
–
Cycle 2:
The host ASIC drives the DQ[67:0]
with the data to be written to the data array,
mask array, external SRAM, or register location
of the selected device.
to
the
CMD[1:0]
–
Cycle 3:
Idle cycle. At the termination of this cy-
cle, another operation can begin.
Note:
The latency of the SRAM WRITE will be
different than the one described above (see
SRAM PIO Access, page 126).
The burst WRITE operation lasts for n + 2 CLK cy-
cles (where n signifies the number of accesses in
the burst as specified in the BLEN field of the
WBURREG register, please see Figure 18, page
35).
This operation assumes that the host ASIC has
programmed the WBURREG with the starting ad-
dress (ADR) and the length of transfer (BLEN) be-
fore initiating the burst write command (see Table
24, page 36 for format). The sequence is as fol-
lows:
–
Cycle 1A:
The host ASIC applies the WRITE In-
struction on the CMD[1:0] (CMD[2] = 1), using
CMDV = 1 and the address supplied on the DQ
Bus, as shown in Table 24, page 36. The host
ASIC also supplies the index to the global mask
register to mask the write to the data or mask ar-
ray locations in CMD[5:3].
–
Cycle 1B:
The host ASIC continues to apply the
WRITE
Instruction
(CMD[2] = 0), using CMDV = 1 and the address
supplied on the DQ Bus. The host ASIC contin-
ues to supply the global mask register index to
mask the WRITE to the data or mask array loca-
tions in CMD[5:3]. The host ASIC selects the
device where ID[4:0] matches the DQ[25:21]
lines, or it selects all the devices when
DQ[25:21] = 11111.
on
the
CMD[1:0]
DQ[67:26]
DQ[25:21]
DQ[20:19]
DQ[18:6]
DQ[5:0]
Reserved
ID
11: Register
Reserved
Register Address
DQ[67:26]
DQ[25:21]
DQ[20:19]
DQ[18:15]
DQ[14:0]
Reserved
ID
00: Data Array
Reserved
Do not care. These 15 bits come from the internal
register (RBURADR) which increments for each
access.
Reserved
ID
01: Mask
Array
Reserved
Do not care. These 16 bits come from the internal
register (RBURADR) which increments for each
access.
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