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參數(shù)資料
| 型號： | M93C76-MB6TP |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 512 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8 |
| 封裝： | 2 X 3 MM, ROHS COMPLIANT, MLP-8 |
| 文件頁數(shù)： | 6/38頁 |
| 文件大?。?/td> | 348K |
| 代理商： | M93C76-MB6TP |
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Instructions
M93C86, M93C76, M93C66, M93C56, M93C46
5.1
Read Data from Memory
The Read Data from Memory (READ) instruction outputs data on Serial Data Output (Q).
When the instruction is received, the op-code and address are decoded, and the data from
the memory is transferred to an output shift register. A dummy 0 bit is output first, followed
by the 8-bit byte or 16-bit word, with the most significant bit first. Output data changes are
triggered by the rising edge of Serial Clock (C). The M93Cx6 automatically increments the
internal address register and clocks out the next byte (or word) as long as the Chip Select
Input (S) is held High. In this case, the dummy 0 bit is not output between bytes (or words)
and a continuous stream of data can be read.
5.2
Write Enable and Write Disable
The Write Enable (WEN) instruction enables the future execution of erase or write
instructions, and the Write Disable (WDS) instruction disables it. When power is first
applied, the M93Cx6 initializes itself so that erase and write instructions are disabled. After
an Write Enable (WEN) instruction has been executed, erasing and writing remains enabled
until an Write Disable (WDS) instruction is executed, or until VCC falls below the power-on
reset threshold voltage. To protect the memory contents from accidental corruption, it is
advisable to issue the Write Disable (WDS) instruction after every write cycle. The Read
Data from Memory (READ) instruction is not affected by the Write Enable (WEN) or Write
Disable (WDS) instructions.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M93C76-WDS6G | 512 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| ML1I-65656V-100SHXXX | 32K X 8 STANDARD SRAM, 100 ns, CDIP28 |
| MLCP-65656V-100/883 | 32K X 8 STANDARD SRAM, 100 ns, CDIP28 |
| ML1I-65656L-80/883:D | 32K X 8 STANDARD SRAM, 80 ns, CDIP28 |
| MLCP-65656L-85 | 32K X 8 STANDARD SRAM, 85 ns, CDIP28 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M93C-76MB7TG | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C76-MN3 | 功能描述:電可擦除可編程只讀存儲器 8K (1Kx8 or 512x16) RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M93C76-MN3T | 功能描述:電可擦除可編程只讀存儲器 8K (1Kx8 or 512x16) RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M93C76-MN6 | 功能描述:電可擦除可編程只讀存儲器 8K (1Kx8 or 512x16) RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M93C76-MN6P | 功能描述:電可擦除可編程只讀存儲器 電可擦除可編程只讀存儲器 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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