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參數(shù)資料
| 型號(hào)： | M93C76-MB6TP |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 512 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8 |
| 封裝： | 2 X 3 MM, ROHS COMPLIANT, MLP-8 |
| 文件頁數(shù)： | 8/38頁 |
| 文件大?。?/td> | 348K |
| 代理商： | M93C76-MB6TP |
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Instructions
M93C86, M93C76, M93C66, M93C56, M93C46
5.4
Write
For the Write Data to Memory (WRITE) instruction, 8 or 16 data bits follow the op-code and
address bits. These form the byte or word that is to be written. As with the other bits, Serial
Data Input (D) is sampled on the rising edge of Serial Clock (C).
After the last data bit has been sampled, the Chip Select Input (S) must be taken low before
the next rising edge of Serial Clock (C). If Chip Select Input (S) is brought low before or after
this specific time frame, the self-timed programming cycle will not be started, and the
addressed location will not be programmed. The completion of the cycle can be detected by
monitoring the READY/BUSY line, as described later in this document.
Once the Write cycle has been started, it is internally self-timed (the external clock signal on
Serial Clock (C) may be stopped or left running after the start of a Write cycle). The cycle is
automatically preceded by an Erase cycle, so it is unnecessary to execute an explicit erase
instruction before a Write Data to Memory (WRITE) instruction.
Figure 5.
ERASE, ERAL sequences
1.
5.5
Erase All
The Erase All Memory (ERAL) instruction erases the whole memory (all memory bits are set
to 1). The format of the instruction requires that a dummy address be provided. The Erase
cycle is conducted in the same way as the Erase instruction (ERASE). The completion of
the cycle can be detected by monitoring the READY/BUSY line, as described in the
READY/BUSY status section.
AI00879B
S
ERASE
1 1
D
Q
ADDR
OP
CODE
1
BUSY
READY
CHECK
STATUS
S
ERASE
ALL
1
0
D
Q
OP
CODE
1
BUSY
READY
CHECK
STATUS
0
An
A0
Xn X0
ADDR
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M93C76-WDS6G | 512 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| ML1I-65656V-100SHXXX | 32K X 8 STANDARD SRAM, 100 ns, CDIP28 |
| MLCP-65656V-100/883 | 32K X 8 STANDARD SRAM, 100 ns, CDIP28 |
| ML1I-65656L-80/883:D | 32K X 8 STANDARD SRAM, 80 ns, CDIP28 |
| MLCP-65656L-85 | 32K X 8 STANDARD SRAM, 85 ns, CDIP28 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M93C-76MB7TG | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C76-MN3 | 功能描述:電可擦除可編程只讀存儲(chǔ)器 8K (1Kx8 or 512x16) RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M93C76-MN3T | 功能描述:電可擦除可編程只讀存儲(chǔ)器 8K (1Kx8 or 512x16) RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M93C76-MN6 | 功能描述:電可擦除可編程只讀存儲(chǔ)器 8K (1Kx8 or 512x16) RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| M93C76-MN6P | 功能描述:電可擦除可編程只讀存儲(chǔ)器 電可擦除可編程只讀存儲(chǔ)器 RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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