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參數(shù)資料
| 型號(hào)： | M93C86-MN7 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| 中文描述： | 16Kbit，8Kbit，4Kbit，2Kbit和1Kbit（8位或16位寬）MICROWIRE串行EEPROM的訪問(wèn) |
| 文件頁(yè)數(shù)： | 9/31頁(yè) |
| 文件大?。?/td> | 259K |
| 代理商： | M93C86-MN7 |
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M93C86, M93C76, M93C66, M93C56, M93C46
Erase
The Erase Byte or Word (ERASE) instruction sets
the bits of the addressed memory byte (or word) to
1. Once the address has been correctly decoded,
the falling edge of the Chip Select Input (S) starts
the self-timed Erase cycle. The completion of the
cycle can be detected by monitoring the Ready/
Busy line, as described in the
READY/BUSY STA-
TUS
section.
Write
For the Write Data to Memory (WRITE) instruction,
8 or 16 data bits follow the op-code and address
bits. These form the byte or word that is to be writ-
ten. As with the other bits, Serial Data Input (D) is
sampled on the rising edge of Serial Clock (C).
After the last data bit has been sampled,
the Chip
Select Input (S) must be taken Low before the next
rising edge of Serial Clock (C).
If Chip Select Input
(S) is brought Low before or after this specific time
frame, the self-timed programming cycle will not
be started, and the addressed location will not be
programmed. The completion of the cycle can be
detected by monitoring the Ready/Busy line, as
described later in this document.
Once the Write cycle has been started, it is inter-
nally self-timed (the external clock signal on Serial
Clock (C) may be stopped or left running after the
start of a Write cycle). The cycle is automatically
preceded by an Erase cycle, so it is unnecessary
to execute an explicit erase instruction before a
Write Data to Memory (WRITE) instruction.
Figure 5. ERASE, ERAL Sequences
Note: For the meanings of An and Xn, please see
Table 5.
,
Table 6.
and
Table 7.
.
AI00879B
S
ERASE
1 1
D
Q
ADDR
OP
CODE
1
BUSY
READY
CHECK
STATUS
S
ERASE
ALL
1
0
D
Q
OP
CODE
1
BUSY
READY
CHECK
STATUS
0
0
An
A0
Xn X0
ADDR
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M93C86-WDS6 | 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C86-WDS7 | 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C86-WDW3 | 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C86-WDW6 | 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C86-WDW7 | 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M93C-86RBN6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C-86RBN7P | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C-86RDS3T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM |
| M93C86-RDS6TG | 制造商:STMicroelectronics 功能描述:EEPROM SERL-MICROWIRE 16KBIT 2KX8 2.5V/3.3V/5V 8TSSOP - Tape and Reel |
| M93C86-RDW3TP/K | 功能描述:EEPROM MICROWIRE 16KB 8TSSOP 制造商:stmicroelectronics 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:16K（2K x 8，1K x 16） 速度:2MHz 接口:Microwire 3 線串行 電壓 - 電源:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 125°C（TA） 封裝/外殼:8-TSSOP（0.173"，4.40mm 寬） 供應(yīng)商器件封裝:8-TSSOP 標(biāo)準(zhǔn)包裝:1 |
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