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參數(shù)資料
| 型號： | MA02305AK-SMB |
| 英文描述： | 3.0 V 100 mW RF Power Amplifier IC for Bluetooth |
| 中文描述： | 3.0 V的100毫瓦射頻功率放大器IC藍牙 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 141K |
| 代理商： | MA02305AK-SMB |
3.0 V 100 mW RF Power Amplifier
IC for Bluetooth
M
MA02305AK
V 1.00
Features
I
20 dB Gain – dramatically increases range of your low
power Bluetooth devices
I
Single 3.0V positive supply – operates over a wide
range of supply voltages
I
Extremely small size – 6 pin SOT plastic package -
3 mm x 1.75 mm body size
I
Output power easily controllable via V
DD1
I
45% Power Added Efficiency
I
100% Duty Cycle
I
2000 to 2900 MHz Operation
I
Self-Aligned MSAG
-Lite MESFET Process
Description
The MA02305AK is an RF power amplifier based on M/A-
COM’s Self-Aligned MSAG
MESFET Process. This
product is designed for use in 2.4 GHz ISM products as a
booster for high power Bluetooth devices. Output power
can be controlled to meet Bluetooth requirements via vary-
ing input power or the voltage on V
DD1
.
Electrical Characteristics:
V
DD1
= 2.5 V, V
DD2
= 3 V, P
IN
= +0 dBm, Duty Cycle = 100%, T
A
= 25°C
Characteristic
Symbol
Min
Typ
Max
Unit
Frequency Range
2400
2500
MHz
Output Power f = 2450 MHz
P
OUT
18.7
20
dBm
Power Added Efficiency f = 2450 MHz
η
40
45
%
Harmonics
2
3
-30
-27
-26
-22
dBc
Input VSWR
-
1.5
2.0
:1
Off Isolation (V
DD
=0 V)
S
21
-25
dB
Thermal Resistance, junction to soldering point (pin 2)
R
TH
180
°C/W
Load Mismatch (V
DD
= 5.5 V, VSWR = 8:1, P
IN
= 0 dBm)
-
No Degradation in Power Output
Stability (P
IN
= 0dBm, V
DD
= 0-5.5 V, Load VSWR = 5:1, fixed phases)
-
All non-harmonically related outputs
more than 60 dB below desired signal
Maximum Ratings
(T
A
= 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DC Supply Voltage
V
DD
5.5
V
RF Input Power
P
IN
10
mW
Junction Temperature
T
J
150
°C
Storage Temperature Range
T
STG
-40 to +150
°C
Ordering Information
Part Number
Package
MA02305AK-R7
7 inch, 3000 Piece Reel
MA02305AK-SMB
MA02305AK Test Board
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