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參數(shù)資料
| 型號(hào)： | MA4BPS101 |
| 英文描述： | PIN Diode Chips with Offset Bond Pads |
| 中文描述： | PIN二極管芯片的邦德片偏移 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 83K |
| 代理商： | MA4BPS101 |
PIN Diode Chips With Offset Bond Pads
MA4BPS101, MA4BPS201, MA4BPS301
MA4BPS101, MA4BPS201, MA4BPS301
M/A-COM Division of AMP Incorporated
Q
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Q
Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Q
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.01
Features
Bond Pads Removed From Active Junction
Large Bond Pads Support Multiple Bond Wires
Rugged Silicon-Glass Construction
Silicon Nitride Passivation
Polyimide Scratch Protection
Description
These silicon - glass PIN diode chips are fabricated with
M/A-COM’s patented HMIC process. They contain a single
shunt silicon PIN diode embedded in a glass substrate with dual
75 x 150 micron bond pads located near the chip edges. The large
pads allow use of multiple bond wires. The location of these pads
on a glass substrate results in low parasitic capacitance. The
diode junction is passivated with silicon nitride and a layer of
polyimide has been added for scratch protection during assembly.
The devices are available on industry standard tape frame for
automatic insertion and assembly in high volume applications.
Applications
These diodes are designed for use as general PIN elements in
switches and switched pad attenuators. The chips can handle up
to 10 watts of RF power, and are well suited for use in T/R
switches for subscriber phones, particularly the higher power and
higher frequency systems for satellite based systems. They are
also useful for the switching element in phased array radar appli-
cations. The larger bond pad allows for two (2) 1 mil dia contact
wires which reduces the bond wire inductance almost in half.
MA4BPS101
Min.
Typ.
0.13
MA4BPS201
Min.
Typ.
0.20
MA4BPS301
Min.
Typ.
0.30
Parameters
Total Capacitance
Series Resistance
1
Parallel Resistance
2
Breakdown Voltage
Carrier Lifetime
2
Thermal Impedance
2
Symbol
C
T
Rs
Rp
Vb
T
L
θ
jc
Units
pF
K
Volts
nS
°
C/W
Test Conditions
-5 Volts at 1 MHz
+10 mA at 1 GHz
0 Volts at 1 GHz
-10 uA
+10mA/-6mA
1A/.01A, 10 mS
Max.
0.17
2.4
Max.
0.25
1.3
Max.
0.35
1.2
1.9
14
110
300
38
1.0
6
110
300
28
0.9
6
110
300
24
70
70
70
Electrical Specifications @ +25°C
PIN Diode Chips with
Offset Bond Pads
Chip Layout
Absolute Maximum Rating
Parameter
Operating Temperature
Storage Temperature
Forward Current
Reverse Voltage
Incident RF Power
Mounting Temperature
1
Absolute Maximum
-60
°
C to +150
°
C
-65
°
C to +175
°
C
100mA
70 V
+40 dBm (CW)
+320
°
C for 10 seconds
1. Exceeding these limits may cause permanent damage.
1. Guaranteed by correlation to 2 MHz on-wafer measurements.
2. Tested on a sample basis only.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MA4BPS201 | 制造商:M/A-COM Technology Solutions 功能描述:PIN ATTENUATOR/SWIT 70V 2PIN ODS-1244 - Bulk |
| MA4BPS301 | 制造商:M/A-COM Technology Solutions 功能描述:PIN ATTENUATOR/SWIT 70V 2PIN ODS-1244 - Bulk |
| MA4C5 | 制造商:EDAL 制造商全稱:EDAL 功能描述:SILICON GENERAL PURPOSE 3.0 AMP DIODES |
| MA4CM00 | 制造商:TE Connectivity 功能描述: |
| MA4CM01 | 制造商:TE Connectivity 功能描述: |
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