參數資料
型號: MA4E2513L-1289
元件分類: 射頻混頻器
英文描述: SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE
封裝: CASE 1289, 2 PIN
文件頁數: 1/3頁
文件大?。?/td> 99K
代理商: MA4E2513L-1289
1
SURMOUNTTM Low Barrier Tee “0301” Footprint Silicon
Schottky Diodes
M/A-COM Products
Rev. V2
MA4E2513L-1289
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to
Features
Extremely Low Parasitic Capitance and Inductance
Extremely Small “0301” (1000 x 300 um) Footprint
Surface Mountable in Microwave Circuits, No Wire-
bonds Required
Rugged HMIC Construction with Polyimide Scratch
Protection
Reliable, Multilayer Metalization with a Diffusion Bar-
rier, 100 % Stabilization Bake (300°C, 16 hours)
Lower Susceptibility to ESD Damage
Description and Applications
The MA4E2513L-1289 SURMOUNT
TM Diodes are Sili-
con Low Barrier Schottky Devices fabricated with the
patented
Heterolithic
Microwave
Integrated
Circuit
(HMIC) process. HMIC circuits consist of Silicon pedes-
tals which form diodes or via conductors embedded in
glass dielectric, which acts as the low dispersion, micro-
strip transmission medium.
The combination of silicon
and glass allows HMIC devices to have excellent loss
and power dissipation characteristics in a low profile,
reliable device.
The Surmount Schottky devices are excellent choices for
circuits requiring the small parasitics of a beam lead de-
vice coupled with the superior mechanical performance
of a chip. The Surmount structure employs very low re-
sistance silicon vias to connect the Schottky contacts to
the metalized mounting pads on the bottom surface of
the chip. These devices are reliable, repeatable, and a
lower cost performance solution to conventional devices.
They have lower susceptibility to electrostatic discharge
than conventional beam lead Schottky diodes.
The multi-layer metalization employed in the fabrication
of the Surmount Schottky junctions includes a platinum
diffusion barrier, which permits all devices to be sub-
jected to a 16-hour non-operating stabilization bake at
300°C.
The extremely small “0301” outline allows for Surface
Mount placement and multi-functional polarity orienta-
tions.
The MA4E2513L-1289 SURMOUNT
TM Diode is recom-
mended for use in microwave circuits through Ku band
frequencies for lower power applications such as mixers,
sub-harmonic mixers, detectors, and limiters. The HMIC
construction facilitates the direct replacement of more
fragile beam lead diodes with the corresponding sur-
mount diode, which can be connected to a hard or soft
substrate circuit with solder.
Case Style 1289
(Top, Side, & Bottom Views)
A
B
C
B
DE
D
E
D
Cathode 1
Common
Anode 2
DIM
INCHES
MIN.
MAX.
MIN.
MAX.
A
0.038
0.040
0.975
1.025
B
0.011
0.013
0.275
0.325
C
0.004
0.008
0.102
0.203
D
0.007
0.009
0.175
0.225
MILLIMETERS
E
0.007
0.009
0.175
0.225
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