參數(shù)資料
型號(hào)： MA4P274-1225T
英文描述： Quad PIN Diode p Attenuator 5 .3000 MHz
中文描述： 四PIN二極管p衰減5 0.3000兆赫
文件頁(yè)數(shù)： 3/10頁(yè)
文件大小： 209K
代理商： MA4P274-1225T
MA4PMA4P274-1225T
Specifications subject to change without notice.
n
North America:
Tel. (800) 366-2266
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Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Quad PIN Diode
p
Attenuator
Typical 75
W
SOT-25 RF Performance @ +25 °C using Wideand RF Circuit Design
( Values Shown include Through Loss Calibrated Out of RF Test Circuit )
Parameter
Frequency Range
Test Conditions
Units
Min.
Typ.
Max.
Insertion Loss
5 – 1,000 MHz
+ 2 mA / Series Diode
and 1.0 V Shunt 1 and 2 Bias
F = 1 GHz
dB
-1.1
Insertion Loss
5 – 1,000 MHz
+ 4.5 mA / Series Diode
and 1.0 V Shunt 1 and 2 Bias
F = 1 GHz
dB
-0.6
Attenuation
5 – 1,000 MHz
0 mA / Series Diode
and 1 V Shunt 1 and 2 Bias
F = 1 GHz
dB
-27
Return Loss
5 – 1,000 MHz
+ 4.5 mA / Series Diode
and 1.0 V Shunt 1 and 2 Bias
F = 1 GHz
dB
-10
3
Typical 50
W
SOT-25 RF Performance @ +25 °C using Wideand RF Circuit Design
( Values Shown include Through Loss Calibrated Out of RF Test Circuit )
Parameter
Frequency Range
Test Conditions
Units
Min.
Typ.
Max.
Insertion Loss
5 – 1,000 MHz
+ 3 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F = 1 GHz
dB
-2.0
Insertion Loss
5 – 1,000 MHz
+ 6.5 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F = 1 GHz
dB
-1.0
Return Loss
5 – 1,000 MHz
+ 6.5 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F = 1 GHz
dB
-10
Attenuation
5 – 1,000 MHz
0 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F = 1 GHz
dB
-29
Input IP3
5 – 1,000 MHz
0 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F1 = 1000 MHz, F2 = 1100 MHz
dBm
43
Input IP3
5 – 1,000 MHz
+ 6.5 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F1 = 1000 MHz, F2 = 1100 MHz
dBm
43
Input IP3
5 – 1,000 MHz
0 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F1 = 100 MHz, F2 = 110 MHz
dBm
43
Input IP3
5 – 1,000 MHz
+ 6.5 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F1 = 100 MHz, F2 = 110 MHz
dBm
33
Settling Time
5 – 1,000 MHz
Within 1 dB of Final Attenuation Value
F = 1 GHz
uS
3
RF C.W. Incident
Power
5 – 1,000 MHz
0 – 20 V Series Diode Bias
and 0.75 V Shunt 1 and 2 Bias
dBm
+ 20
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參數(shù)描述
MA4P274-1225T_1 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Quad PIN Diode Attenuator 5 -3000 MHz
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