參數(shù)資料
型號: MAX4031EEUD+T
廠商: Maxim Integrated Products
文件頁數(shù): 11/12頁
文件大小: 0K
描述: IC OP AMP TRPL 144MHZ 14-TSSOP
產(chǎn)品培訓(xùn)模塊: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝: 2,500
應(yīng)用: 通用
輸出類型: 滿擺幅
電路數(shù): 3
-3db帶寬: 144MHz
轉(zhuǎn)換速率: 115 V/µs
電流 - 電源: 12mA
電流 - 輸出 / 通道: 100mA
電壓 - 電源,單路/雙路(±): 4.5 V ~ 5.5 V
安裝類型: 表面貼裝
封裝/外殼: 14-TSSOP(0.173",4.40mm 寬)
供應(yīng)商設(shè)備封裝: 14-TSSOP
包裝: 帶卷 (TR)
MAX4030E/MAX4031E
Human Body Model
Figure 8 shows the Human Body Model and Figure 9
shows the current waveform it generates when dis-
charged into low impedance. This model consists of a
150pF capacitor charged to the ESD voltage of interest,
and then discharged into the test device through a
1.5k
resistor.
IEC 1000-4-2
The IEC 1000-4-2 standard covers ESD testing and per-
formance of finished equipment; it does not specifically
refer to ICs. The MAX4030E/MAX4031E enable the
design of equipment that meets the highest level (level
4) of IEC 1000-4-2 without the need for additional ESD
protection components. The major difference between
tests done using the Human Body Model and IEC 1000-
4-2 is higher peak current in IEC 1000-4-2. Because
series resistance is lower in the IEC 1000-4-2 model, the
ESD-withstand voltage measured to this standard is gen-
erally lower than that measured using the Human Body.
Figure 10 shows the IEC 1000-4-2 model and Figure 11
shows the current waveform for the ±8kV IEC 1000-4-2
level 4 ESD Contact Discharge test. The Air-Gap test
involves approaching the device with a charged probe.
The Contact Discharge method connects the probe to
the device before the probe is energized.
Chip Information
MAX4030E TRANSISTOR COUNT: 271
MAX4031E TRANSISTOR COUNT: 387
PROCESS: BiCMOS
Low-Cost, 144MHz, Dual/Triple Op Amps
with ±15kV ESD Protection
8
_______________________________________________________________________________________
ISOLATION RESISTANCE
vs. CAPACITIVE LOAD
CAPACITIVE LOAD (pF)
R
ISO
(
)
400
300
200
100
2
4
6
8
10
12
14
16
18
20
0
500
Figure 4. Isolation Resistance vs. Capacitive Load
SMALL-SIGNAL GAIN vs. FREQUENCY WITH LOAD
CAPACITANCE AND NO ISOLATION RESISTOR
FREQUENCY (MHz)
GAIN
(dB)
100
10
1
-3
-4
-5
-2
-1
0
1
2
3
4
5
6
-6
0.1
1000
CL = 20pF
CL = 10pF
CL = 5pF
Figure 5. Small-Signal Gain vs. Frequency with Load
Capacitance and No Isolation Resistor
SMALL-SIGNAL GAIN vs. FREQUENCY WITH LOAD
CAPACITANCE AND 10
ISOLATION RESISTOR
FREQUENCY (MHz)
GAIN
(dB)
100
10
1
-3
-4
-5
-2
-1
0
1
2
3
4
5
6
-6
0.1
1000
CL = 20pF
CL = 10pF
CL = 5pF
Figure 6. Small-Signal Gain vs. Frequency with Load
Capacitance and 10
Isolation Resistor
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