參數(shù)資料
型號(hào): MAX4685EBC+T
廠商: Maxim Integrated Products
文件頁(yè)數(shù): 3/10頁(yè)
文件大小: 0K
描述: IC SWITCH DUAL SPDT 12UCSP
產(chǎn)品培訓(xùn)模塊: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝: 2,500
功能: 開(kāi)關(guān)
電路: 2 x SPDT
導(dǎo)通狀態(tài)電阻: 800 毫歐
電壓電源: 單電源
電壓 - 電源,單路/雙路(±): 1.8 V ~ 5.5 V
工作溫度: -40°C ~ 85°C
安裝類(lèi)型: 表面貼裝
封裝/外殼: 12-WFBGA,WLCSP
供應(yīng)商設(shè)備封裝: 12-UCSP(3x4)
包裝: 帶卷 (TR)
MAX4684/MAX4685
0.5
Ω
Ω/0.8Ω
Ω Low-Voltage, Dual SPDT
Analog Switches in UCSP
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
(All Voltages Referenced to GND)
V+, IN_......................................................................-0.3V to +6V
COM_, NO_, NC_ (Note1) ........................... -0.3V to (V+ + 0.3V)
Continuous Current NO_, NC_, COM_ .......................... ±300mA
Peak Current NO_, NC_, COM_
(pulsed at 1ms, 50% duty cycle).................................±400mA
Peak Current NO_, NC_, COM_
(pulsed at 1ms, 10% duty cycle).................................±500mA
Continuous Power Dissipation (TA = +70°C)
10-Pin TDFN (derate 18.5mW/°C above +70°C)........1482mW
12-Bump UCSP (derate 11.4mW/°C above +70°C) ...909mW
10-Pin MAX (derate 5.6mW/°C above +70°C) ..........444mW
Operating Temperature Ranges..........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Bump Temperature (soldering) (Note 2)
Infared (15s)................................................................+220°C
Vapor Phase (60s) ......................................................+215°C
Note 1: Signals on NO_, NC_, and COM_ exceeding V+ or GND are clamped by internal diodes. Limit forward-diode current to
maximum current rating.
Note 2: This device is constructed using a unique set of packaging techniques that impose a limit on the thermal profile the device
can be exposed to during board level solder attach and rework. This limit permits only the use of the solder profiles recom-
mended in the industry-standard specification, JEDEC 020A, paragraph 7.6, Table 3 for IR/VPR and Convection reflow. Pre-
heating is required. Hand or wave soldering is not allowed.
PARAMETER
SYMBOL
CONDITIONS
TA
MIN
TYP
MAX
UNITS
ANALOG SWITCH
Analog Signal Range
VNO_, VNC_,
VCOM_
E0
V+
V
+25
°C
0.3
0.5
MAX4684
E
0.5
+25
°C0.45
0.8
NC_ On-Resistance
(Note 4)
RON(NC)
V+ = 2.7V; ICOM_ = 100mA;
VNC_ = 0 to V+
MAX4685
E
0.8
Ω
+25
°C0.45
0.8
NO_ On-Resistance
(Note 4)
RON(NO)
V+ = 2.7V; ICOM_ = 100mA;
VNO_ = 0 to V+
E
0.8
Ω
+25
°C0.06
On-Resistance Match
Between Channels
(Notes 4, 5)
ΔRON
V+ = 2.7V; ICOM_ = 100mA;
VNO_ or VNC_ = 1.5V
E
0.06
Ω
MAX4684
E
0.15
NC_ On-Resistance
Flatness (Note 6)
RFLAT (NC)
V+ = 2.7V; ICOM = 100mA;
VNC_ = 0 to V+
MAX4685
E
0.35
Ω
NO_ On-Resistance
Flatness (Note 6)
RFLAT (NO)
V+ = 2.7V; ICOM = 100mA;
VNO_ = 0 to V+
E
0.35
Ω
+25
°C
-1
1
NO_ or NC_ Off-
Leakage Current
(Note 7)
INO_(OFF) or
INC_(OFF)
V+ = 3.3V; VNO_ or VNC_ = 3V, 0.3V;
VCOM_ = 0.3V, 3V
E
-10
10
nA
+25
°C
-2
2
COM_ On-Leakage
Current (Note 7)
ICOM_(ON)
V+ = 3.3V; VNO_ or VNC_ = 3V, 0.3V, or
unconnected; VCOM_ = 3V, 0.3V, or
unconnected
E
-20
20
nA
DYNAMIC CHARACTERISTICS
+25
°C
30
50
Turn-On Time
tON
V+ = 2.7V, VNO_ or VNC_ = 1.5V;
RL = 50
Ω; CL = 35pF; Figure 2
E60
ns
ELECTRICAL CHARACTERISTICS—+3V SUPPLY
(V+ = +2.7V to +3.3V, VIH = +1.4V, VIL = +0.5V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at +3V and +25°C.)
(Notes 3, 9, 10)
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