參數(shù)資料
型號: MAX6873ETJ
廠商: MAXIM INTEGRATED PRODUCTS INC
元件分類: 電源管理
英文描述: EEPROM-Programmable, Hex/Quad, Power-Supply Sequencers/Supervisors with Charge-Pump Outputs
中文描述: 4-CHANNEL POWER SUPPLY MANAGEMENT CKT, QCC32
封裝: 7 X 7 MM, 0.80 MM HEIGHT, MO-220, TQFN-32
文件頁數(shù): 22/48頁
文件大?。?/td> 374K
代理商: MAX6873ETJ
MAX6872/MAX6873
EEPROM-Programmable, Hex/Quad,
Power-Supply Sequencers/Supervisors
______________________________________________________________________________________
29
Table 19 only applies to PO8 of the MAX6872. Write a 0
to a bit to make the PO8 output independent of the
respective signal (IN1–IN6 primary or secondary
thresholds, WD1 or WD2, GPI1–GPI4, MR, or other pro-
grammable outputs).
Output Stage Configurations
Independently program each programmable output as
active high or active low (Table 20). Additionally, pro-
gram each programmable output as weak pullup, push-
pull, open-drain, or charge pump (Tables 21 and 22).
Every programmable output can be configured as
open-drain or weak pullup; however, only PO1–PO4
(MAX6872) or PO1–PO2 (MAX6873) can be configured
as charge-pump outputs, and only PO5–PO8
(MAX6872) or PO3–PO5 (MAX6873) can be configured
as push-pull outputs. Finally, set the PO_ timeout period
for each programmable output (Table 23).
An internal 10k
resistor provides the pullup resistance
for outputs configured as weak pullup stages. Program
each weak pullup output stage to refer to ABP or one of
the IN3–IN6 inputs. The programmable outputs source up
to 10mA and sink up to 4mA when configured as push-
pull stages. Program each push-pull output stage to ref-
erence to one of IN3–IN6. PO1–PO4 (MAX6872)/
PO1–PO2 (MAX6873) pull to VABP + 5V when configured
as charge-pump outputs.
Table 19. PO8 (MAX6872 only) Output Dependency
REGISTER
ADDRESS
EEPROM
MEMORY
ADDRESS
BIT
OUTPUT ASSERTION CONDITIONS
[0]
1 = PO8 assertion depends on IN1 primary undervoltage threshold (Table 2).
[1]
1 = PO8 assertion depends on IN2 primary undervoltage threshold (Table 3).
[2]
1 = PO8 assertion depends on IN3 primary undervoltage threshold (Table 4).
[3]
1 = PO8 assertion depends on IN4 primary undervoltage threshold (Table 4).
[4]
1 = PO8 assertion depends on IN5 primary undervoltage threshold (Table 4).
[5]
1 = PO8 assertion depends on IN6 primary undervoltage threshold (Table 4).
[6]
1 = PO8 assertion depends on watchdog 1 (Tables 25 and 26).
36h
8036h
[7]
1 = PO8 assertion depends on watchdog 2 (Tables 25 and 26).
[0]
1 = PO8 assertion depends on IN1 secondary undervoltage/overvoltage threshold (Table 2).
[1]
1 = PO8 assertion depends on IN2 secondary undervoltage/overvoltage threshold (Table 3).
[2]
1 = PO8 assertion depends on IN3 secondary undervoltage/overvoltage threshold (Table 4).
[3]
1 = PO8 assertion depends on IN4 secondary undervoltage/overvoltage threshold (Table 4).
[4]
1 = PO8 assertion depends on IN5 secondary undervoltage/overvoltage threshold (Table 4).
[5]
1 = PO8 assertion depends on IN6 secondary undervoltage/overvoltage threshold (Table 4).
[6]
1 = PO8 assertion depends on GPI1 (Table 5).
37h
8037h
[7]
1 = PO8 assertion depends on GPI2 (Table 5).
[0]
1 = PO8 assertion depends on GPI3 (Table 5).
[1]
1 = PO8 assertion depends on GPI4 (Table 5).
[2]
1 = PO8 assertion depends on PO1 (Table 8).
[3]
1 = PO8 assertion depends on PO2 (Table 9).
[4]
1 = PO8 assertion depends on PO3 (Tables 10 and 11).
[5]
1 = PO8 assertion depends on PO4 (Tables 12 and 13).
[6]
1 = PO8 assertion depends on PO5 (Tables 14 and 15).
38h
8038h
[7]
1 = PO8 assertion depends on PO6 (Tables 16 and 17).
39h
8039h
[0]
1 = PO8 assertion depends on PO7 (Table 18).
40h
8040h
[7]
1 = PO8 asserts when MR = low (Table 6).
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