參數(shù)資料
型號: MAX9157EGJ+
廠商: Maxim Integrated Products
文件頁數(shù): 9/16頁
文件大?。?/td> 0K
描述: IC TXRX QUAD LVDS 32-TQFN
產(chǎn)品培訓(xùn)模塊: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
標(biāo)準(zhǔn)包裝: 60
類型: 收發(fā)器
驅(qū)動器/接收器數(shù): 4/4
規(guī)程: LVDS
電源電壓: 3 V ~ 3.6 V
安裝類型: 表面貼裝
封裝/外殼: 32-WFQFN 裸露焊盤
供應(yīng)商設(shè)備封裝: 32-TQFN-EP(5x5)
包裝: 管件
MAX9157
Quad Bus LVDS Transceiver
2
_______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
DC ELECTRICAL CHARACTERISTICS
(VCC = 3.0V to 3.6V, RL = 27
±1%, differential input voltage |VID| = 0.1V to VCC, input common-mode voltage VCM = 0.05V to 2.4V,
input voltage range = 0 to VCC, DE_ = high, RE_ = low, TA = -40°C to +85°C, unless otherwise noted. Typical values are at VCC =
3.3V, |VID| = 0.2V, VCM = 1.2V, and TA = +25°C.) (Notes 1 and 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VCC, AVCC to GND................................................-0.3V to +4.0V
DO_+/RIN_+, DO_-/RIN_-, to GND .......................-0.3V to +4.0V
DIN_, DE_, RE_ to GND.........................................-0.3V to +4.0V
RO_ to GND................................................-0.3V to (VCC + 0.3V)
AGND to GND .......................................................-0.3V to +0.3V
Short-Circuit Duration (DO_+/RIN_+, DO_-/RIN_-) ....Continuous
Continuous Power Dissipation (TA = +70°C)
MAX9157EGJ (derate 21.2mW/°C above +70°C) .....1702mW
MAX9157EHJ (derate 11.1mW/°C above +70°C).........889mW
Storage Temperature Range .............................-65°C to +150°C
Maximum Junction Temperature .....................................+150°C
Operating Temperature Range ...........................-40°C to +85°C
ESD Protection
Human Body Model (DO_+/RIN_+, DO_-/RIN_-).............±4kV
Lead Temperature (soldering, 10s) .................................+300°C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
BLVDS (DO_+/RIN_+, DO_-/RIN_-)
Differential Input High Threshold
VTH
DE_ = low
26
100
mV
Differential Input Low Threshold
VTL
DE_ = low
-100
-26
mV
TA = +25
°C, VCC = 3.3V,
VCM = 1.2V
12
26
43
Threshold Hysteresis (Note 3)
VHYST
DE_ = low
Full operating range
9
26
78
mV
0.1V
≤VID≤ 0.6V, DE_ = low
-15
±1.8
15
A
Input Current
IIN+, IIN-
0.6V
< VID≤ 1.2V, DE_ = low
-20
±2.5
20
A
RIN1
VCC = 3.6V, 0 or open, Figure 1
53
k
Input Resistance
RIN2
VCC = 3.6V, 0 or open, Figure 1
148
k
0.1V
≤ VID≤ 0.6V, VCC = 0 or open
-15
±0.9
15
A
Power-Off Input Current
IINO+,
IINO-
0.6V
< VID≤ 1.2V, VCC = 0 or open
-20
±1.8
20
A
Differential Output Voltage
VOD
Figure 2
250
405
460
mV
Change in Magnitude of VOD for
Complementary Output States
VOD
Figure 2
1
25
mV
Offset Voltage
VOS
Figure 2
1.185
1.302
1.435
V
Change in Magnitude of VOS for
Complementary Output States
VOS
Figure 2
3.3
25
mV
Output High Voltage
VOH
Figure 2
1.505
1.6
V
Output Low Voltage
VOL
Figure 2
0.9
1.099
V
DIN_ = high, DO_+/RIN_+ = 0 or
VCC, DO_-/RIN_- = 0 or VCC
-30
-14.8
30
Output Short-Circuit Current
IOS
DIN_ = low, DO_-/RIN_- = 0 or
VCC, DO_+/RIN_+ = 0 or VCC
-30
-14.8
30
mA
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