參數(shù)資料
型號(hào): MB81116422A-84
廠商: Fujitsu Limited
英文描述: CMOS 2×2M ×4 BIT Hyper Page Mode Dynamic RAM(CMOS 2×2M ×4 位超級(jí)頁(yè)面存取模式動(dòng)態(tài)RAM)
中文描述: 的CMOS 2 × 200萬(wàn)× 4位超頁(yè)模式動(dòng)態(tài)RAM(2 × 200萬(wàn)的CMOS × 4位超級(jí)頁(yè)面存取模式動(dòng)態(tài)內(nèi)存)
文件頁(yè)數(shù): 39/43頁(yè)
文件大?。?/td> 275K
代理商: MB81116422A-84
39
MB81116422A-125/-100/-84/-67
TIMING DIAGRAM – 12 : WRITE TO READ TIMING (Example @ CL = 3, BL = 4)
CLK
Command
DQM
DQ
Write
Read
D1
Q1
Q2
D3
Masked
by Read
D2
Note:
Read command should be issued after t
WR
of final data input is satisfied if Read command is applied to the same bank.
t
WR
(min)
t
CAC
(min)
TIMING DIAGRAM – 13 : READ WITH AUTO-PRECHARGE
(Example @ CL = 2, BL = 2 Applied to Same Bank)
CLK
Command
DQ
READA
ACTV
NOP or DESL
DQM
ACTV
Q1
Q2
2 clocks
(same Value as CL)
Note:
Precharge at read with Auto-precharge command (READA) is started from number of clocks that is the same as CAS
Latency (CL) after READA command is asserted.
t
RAS
(min)
t
RP
(min)
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