參數(shù)資料
型號(hào): MB81164442A-100L
廠商: Fujitsu Limited
英文描述: CMOS 4×4M×16 BIT Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4×4M×16 位同步動(dòng)態(tài)RAM)
中文描述: 的CMOS 4 × 4米× 16位同步動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器(SDRAM)(的CMOS 4 × 4米× 16位同步動(dòng)態(tài)RAM)的
文件頁數(shù): 20/46頁
文件大?。?/td> 642K
代理商: MB81164442A-100L
20
MB81164442A-125/-100/-84/-67/-125L/-100L/-84L/-67L
POWER-UP INITIALIZATION
The SDRAM internal condition after power-up will be undefined. It is required to follow the following Power On
Sequence to execute read or write operation.
1. Apply power and start clock. Attempt to maintain either NOP or DESL command at the input.
2. Maintain stable power, stable clock, and NOP condition for a minimum of 200
μ
s.
3. Precharge all banks by Precharge (PRE) or Precharge All command (PALL).
4. Assert minimum of 8 Auto-refresh command (REF).
5. Program the mode register by Mode Register Set command (MRS).
In addition, it is recommended DQM and CKE to track V
CC
to insure that output is High-Z state. The Mode Register
Set command (MRS) can be set before 8 Auto-refresh command (REF).
相關(guān)PDF資料
PDF描述
MB81164442A-100 CMOS 4×4M×16 BIT Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4×4M×16 位同步動(dòng)態(tài)RAM)
MB81164442A-125 CMOS 4×4M×16 BIT Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4×4M×16 位同步動(dòng)態(tài)RAM)
MB81164442A-125L CMOS 4×4M×16 BIT Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4×4M×16 位同步動(dòng)態(tài)RAM)
MB81164442A-67 CMOS 4×4M×16 BIT Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4×4M×16 位同步動(dòng)態(tài)RAM)
MB81164442A-67L CMOS 4×4M×16 BIT Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4×4M×16 位同步動(dòng)態(tài)RAM)
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