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參數(shù)資料
| 型號(hào)： | MB8117400A-60 |
| 廠商： | Fujitsu Limited |
| 英文描述： | CMOS 4 M ×4 BIT Fast Page Mode DRAM(CMOS 4 M ×4位快速頁面存取模式動(dòng)態(tài)RAM) |
| 中文描述： | 的CMOS 4米× 4位快速頁面模式的DRAM（的CMOS 4米× 4位快速頁面存取模式動(dòng)態(tài)內(nèi)存） |
| 文件頁數(shù)： | 1/27頁 |
| 文件大?。?/td> | 304K |
| 代理商： | MB8117400A-60 |
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1
DS05-10175-2E
FUJITSU SEMICONDUCTOR
DATA SHEET
MEMORY
CMOS 4M
FAST PAGE MODE DYNAMIC RAM
×
4 BIT
MB8117400A-50/-60/-70
CMOS 4,194,304
×
4 BIT Fast Mode Dynamic RAM
I
DESCRIPTION
The Fujitsu MB8117400A is a fully decoded CMOS Dynamic RAM (DRAM) that contains 16,777,216 memory
cells accessible in 4-bit increments. The MB8117400A features a “fast page” mode of operation whereby high-
speed random access of up to 1,024-bits of data within the same row can be selected. The MB8117400A DRAM
is ideally suited for mainframe, buffers, hand-held computers video imaging equipment, and other memory
applications where very low power dissipation and high bandwidth are basic requirements of the design. Since
the standby current of the MB8117400A is very small, the device can be used as a non-volatile memory in
equipment that uses batteries for primary and/or auxiliary power.
The MB8117400A is fabricated using silicon gate CMOS and Fujitsu’s advanced four-layer polysilicon and two-
layer aluminum process. This process, coupled with advanced stacked capacitor memory cells, reduces the
possibility of soft errors and extends the time interval between memory refreshes. Clock timing requirements for
the MB8117400A are not critical and all inputs are TTL compatible.
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ABSOLUTE MAXIMUM RATINGS (See NOTE.)
NOTE:
Permanent device damage may occur if the above
operation should be restricted to the conditions as detailed in the operational sections of this data sheet.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings
are exceeded. Functional
Parameter
Symbol
Value
Unit
Voltage at any pin relative to V
SS
V
IN
, V
OUT
–0.5 to +7
V
Voltage of V
CC
supply relative to V
SS
V
CC
–0.5 to +7
V
Power Dissipation
P
D
1.0
W
Short Circuit Output Current
—
50
mA
°
C
°
C
Operating Temperature
T
OPE
0 to 70
Storage Temperature
T
STG
–55 to +125
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be
taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit.
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PDF描述 |
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| MB8117400A-70 | CMOS 4 M ×4 BIT Fast Page Mode DRAM(CMOS 4 M ×4位快速頁面存取模式動(dòng)態(tài)RAM) |
| MB8117400B-50 | 4 M ×4 BITS Fast Page Mode Dynamic RAM(CMOS 4 M ×4 位快速頁面存取模式RAM) |
| MB8117400B-60 | 4 M ×4 BITS Fast Page Mode Dynamic RAM(CMOS 4 M ×4 位快速頁面存取模式RAM) |
| MB8117405A-60 | CMOS 4M ×4 BIT Hyper Page Mode Dynamic RAM(CMOS 4M ×4 位超級(jí)頁面存取模式動(dòng)態(tài)RAM) |
| MB8117405A-70 | CMOS 4M ×4 BIT Hyper Page Mode Dynamic RAM(CMOS 4M ×4 位超級(jí)頁面存取模式動(dòng)態(tài)RAM) |
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