參數(shù)資料
型號(hào): MB88R157APFT-G-XXX-JNE1
廠商: FUJITSU LTD
元件分類: 時(shí)鐘產(chǎn)生/分配
英文描述: 134 MHz, OTHER CLOCK GENERATOR, PDSO8
封裝: 4.40 X 3.10 MM, 1.20 MM HEIGHT, 0.65 MM PITCH, PLASTIC, TSSOP-8
文件頁數(shù): 1/28頁
文件大小: 844K
代理商: MB88R157APFT-G-XXX-JNE1
FUJITSU SEMICONDUCTOR
DATA SHEET
Copyright2010 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2010.12
ASSP
Spread Spectrum Clock Generator
MB88R157A
■ DESCRIPTION
MB88R157A is a clock generator for EMI (Electro Magnetic Interference) reduction. The peak of unnecessary
radiation noise (EMI) can be attenuated by making the oscillation frequency slightly modulate periodically
with the internal modulator.
This product has a built-in non-volatile memory, so its frequency setting can memorize each system or
application.
Also the product has a built-in oscillation stabilization circuit, so it is not necessary to use the external
oscillation stabilization capacitance.
■ FEATURES
Input frequency
: 10 MHz to 50 MHz
Output frequency
: 1 MHz to 134 MHz
Programmable of the parameter of N divider, M divider, K divider
(N divider : 11-bit, M divider : 12-bit, K divider : 7-bit)
Modulation rate
: no modulation,
±0.125%, ±0.25%, ±0.5%, ±0.75%, ±1.0%, ±1.25%, ±1.5%, ±1.75%
Variable function pin
It is possible to switch the VF pin function by setting to a non-volatile memory.
Modulation enabled: It is possible to turn on/off the modulation operation.
Power down control
Output setting selection: It is possible to save two types of frequency setting into a non-volatile memory,
and to select the type to operate.
Equipped with a crystal oscillation circuit
Built-in oscillation stabilization capacitance : 5 pF to 10 pF (0.039 pF step range)
Clock output Duty : 40
% to 60% (Load capacitance 15 pF or less)
Clock Cycle-Cycle Jitter : Less than 100 ps (Output clock is over 3 MHz)
Low power consumption by CMOS process 5 mA (24 MHz, Typ-sample, no load) [Target value]
(Input frequency : 24 MHz, N divider parameter : 200, M divider parameter : 200, K divider parameter : 1)
At power down: 5
μA (Power supply voltage = 3.3 V, at room temperature) [Target value]
Non-volatile memory : FRAM (data retention : 10 years (
+ 55 °C))
Power supply voltage : 2.7 V to 3.6 V
Operating temperature
20 °C to + 85 °C
Package : 8-pin plastic TSSOP
DS04–29146–2E
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