參數(shù)資料
型號(hào): MBD330D
廠商: Motorola, Inc.
英文描述: Dual Schottky Barrier Diodes
中文描述: 雙肖特基二極管
文件頁(yè)數(shù): 2/8頁(yè)
文件大小: 180K
代理商: MBD330D
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10
μ
A)
MBD110DWT1
MBD330DWT1
MBD770DWT1
V(BR)R
7.0
30
70
10
Volts
Diode Capacitance
(VR = 0, f = 1.0 MHz, Note 1)
MBD110DWT1
CT
0.88
1.0
pF
Total Capacitance
(VR = 15 Volts, f = 1.0 MHz)
(VR = 20 Volts, f = 1.0 MHz)
MBD330DWT1
MBD770DWT1
CT
0.9
0.5
1.5
1.0
pF
Reverse Leakage
(VR = 3.0 V)
(VR = 25 V)
(VR = 35 V)
Noise Figure
(f = 1.0 GHz, Note 2)
MBD110DWT1
MBD330DWT1
MBD770DWT1
IR
0.02
13
9.0
0.25
200
200
μ
A
nAdc
nAdc
MBD110DWT1
NF
6.0
dB
Forward Voltage
(IF = 10 mA)
(IF = 1.0 mAdc)
(IF = 10 mA)
(IF = 1.0 mAdc)
(IF = 10 mA)
MBD110DWT1
MBD330DWT1
MBD770DWT1
VF
0.5
0.38
0.52
0.42
0.7
0.6
0.45
0.6
0.5
1.0
Vdc
相關(guān)PDF資料
PDF描述
MBD110DWT1 Dual Schottky Barrier Diodes
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MBD110DWT1 Dual SCHOTTKY Barrier Diodes
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