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參數(shù)資料
| 型號： | MBM150GR6 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 150 A, 600 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 65K |
| 代理商： | MBM150GR6 |
Hitachi IGBT Module / Silicon N-Channel IGBT
MBM150GR6
[Rated 150A/600V, Dual-pack type]
FEATURES OUTLINE DRAWING
·
Low saturation voltage and high speed.
·
Low turn-OFF switching loss.
·
Low noise due to build-in free-wheeling diode.
(Ultra Soft and Fast recovery Diode (USFD))
·
High reliability structure.
·
Isolated heat sink (terminals to base).
CIRCUIT DIAGRAM
ABSOLUTE MAXIMUM RATINGS(T
C
=25°C)
Item
Collector-Emitter Voltage
Gate-Emitter Voltage
DC
Collector Current
1ms
DC
Forward Current
1ms
Collector Power Dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
Terminals
Screw Torque
Mounting
Notes;
*2, *3 : Recommended value 1.67 N·m (17 kgf·cm)
Symbol
V
CES
V
GES
I
C
I
CP
I
F
I
FM
P
C
T
j
T
stg
V
iso
Unit
V
V
Value
600
±
20
150
300
150
*1
300
520
-40 ~ +150
-40 ~ +125
2500(AC 1 minute)
1.96(20)
*2
1.96(20)
*3
A
A
W
°
C
°
C
V
RMS
N·m
(kgf·cm)
-
*1: RMS current of Diode
￡
45 Arms
CHARACTERISTICS (T
C
=25°C)
Item
Collector-Emitter Cut-Off Current
Gate-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Input Capacitance
Symbol
I
CES
I
GES
V
CE(sat)
V
GE(TO)
C
ies
t
r
t
on
t
f
t
off
V
FM
t
rr
R
th(j-c)
R
th(j-c)
Unit
mA
nA
V
V
pF
Min.
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
2.1
-
7400
0.2
0.3
0.2
0.55
1.6
-
Max.
1.0
±
500
2.6
10
-
0.5
0.7
0.3
0.8
2.2
0.3
0.238
0.51
Test Conditions
V
CE
=600V, V
GE
=0V
V
GE
=
±
20V, V
CE
=0V
I
C
=150A, V
GE
=15V
V
CE
=5V, I
C
=150mA
V
CE
=10V, V
GE
=0V, f=1MHz
V
CC
=300V
R
L
=2.0
W
R
G
=16
W
*4
V
GE
=
±
15V
I
F
=150A, V
GE
=0V
I
F
=150A, V
GE
=-10V, di/dt=200A/
m
s
Rise Time
Turn-ON Time
Fall Time
Turn-Off Time
Switching Times
m
s
Peak Forward Voltage Drop
Reverse Recovery Time
V
m
s
IGBT
FWD
Thermal Impedance
°
C/W
-
-
Junction to case
Notes; *4:R
value is the test condition’s value for decision of the switching times, not recommended value, please determine
the suitable R
value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted.
Remark; The specification given herein, is subject to change without prior notice to improve product characteristics.
C2E1
E2
C1
G2
E2
E1
G1
6
3
7
1
3
40
φ
0.8
2-
φ
5.6
2
3
4-Fast-on
Terminal #110
1
4
19
20
18.5
80
23
23
3-M5
C1
E2
C2E1
G
E
Unit in mm
Weight: : 230g
Spec. No.IGBT-SP-99019(R1)
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