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參數(shù)資料
| 型號： | MBM150GR6 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 150 A, 600 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 65K |
| 代理商： | MBM150GR6 |
V
GE
=
15V14V13V
300
250
0
2
4
6
8
10
150
100
200
50
0
11V
12V
TYPICAL
10V
9V
V
GE
=
15V14V13V
300
250
0
2
4
6
8
10
150
100
200
50
0
11V
12V
TYPICAL
10V
9V
C
C
Collector to Emitter Voltage, V
CE
(V)
Collector current vs. Collector to Emitter voltage
Ic
=
150A
Ic
=
300A
10
8
6
4
2
0
0
5
10
15
20
TYPICAL
C
C
Gate to Emitter Voltage, V
GE
(V)
Collector to Emitter voltage vs. Gate to Emitter voltage
20
15
10
5
0
0
100
200
300
500
400
600
TYPICAL
TYPICAL
Vcc
=
300V
Ic
=
150A
Tc
=
25
°
C
G
G
F
F
Gate Charge, Q
G
(nC)
Gate charge characteristics
100
200
250
300
150
50
0
0
1
2
3
4
5
Forward Voltage, V
F
(V)
Forward voltage of free-wheeling diode
10
8
6
4
2
0
0
5
10
15
20
TYPICAL
C
C
Gate to Emitter Voltage, V
GE
(V)
Collector to Emitter voltage vs. Gate to Emitter voltage
Collector to Emitter Voltage, V
CE
(V)
Collector current vs. Collector to Emitter voltage
PDE-M150GR6-0
Tc
=
25
°
C
Ic
=
150A
Ic
=
300A
Pc
=
520W
V
GE
=
0
Tc
=
25
°
C
Tc
=
125
°
C
Tc
=
125
°
C
Tc
=
125
°
C
Tc
=
25
°
C
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