參數(shù)資料
型號(hào): MBM29DL161TD-70PFTR-E1
廠商: SPANSION LLC
元件分類(lèi): PROM
英文描述: 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝: PLASTIC, REVERSE, TSOP-48
文件頁(yè)數(shù): 43/80頁(yè)
文件大?。?/td> 565K
代理商: MBM29DL161TD-70PFTR-E1
MBM29DL16XTD/BD-70/90
Retired Product DS05-20874-8E_July 12, 2007
48
Write/Erase/Program Operations
(Continued)
Parameter
Symbol
70
90
Unit
JEDEC Standard Min
Typ Max
Min
Typ Max
Write Cycle Time
tAVAV
tWC
70
90
ns
Address Setup Time
tAVWL
tAS
0
0
ns
Address Setup Time to OE Low During Toggle
Bit Polling
—tASO
12
15
ns
Address Hold Time
tWLAX
tAH
45
45
ns
Address Hold Time from CE or OE High During
Toggle Bit Polling
—tAHT
0
0
ns
Data Setup Time
tDVWH
tDS
30
35
ns
Data Hold Time
tWHDX
tDH
0
0
ns
Output Enable Hold
Time
Read
—tOEH
0
0
ns
Toggle and Data Polling
10
10
ns
CE High During Toggle Bit Polling
tCEPH
20
20
ns
OE High During Toggle Bit Polling
tOEPH
20
20
ns
Read Recover Time Before Write
tGHWL
0
0
ns
Read Recover Time Before Write
tGHEL
0
0
ns
CE Setup Time
tELWL
tCS
0
0
ns
WE Setup Time
tWLEL
tWS
0
0
ns
CE Hold Time
tWHEH
tCH
0
0
ns
WE Hold Time
tEHWH
tWH
0
0
ns
Write Pulse Width
tWLWH
tWP
35
35
ns
CE Pulse Width
tELEH
tCP
35
35
ns
Write Pulse Width High
tWHWL
tWPH
25
30
ns
CE Pulse Width High
tEHEL
tCPH
25
30
ns
Programming
Operation
Byte
tWHWH1
8
8
s
Word
16
16
s
Sector Erase Operation*1
tWHWH2
1
1
s
VCC Setup Time
tVCS
50
50
s
Rise Time to VID*2
—tVIDR
500
500
ns
Rise Time to VACC*3
—tVACCR
500
500
ns
Voltage Transition Time*2
—tVLHT
4
4
s
Write Pulse Width*2
—tWPP
100
100
s
OE Setup Time to WE Active*2
—tOESP
4
4
s
CE Setup Time to WE Active*2
—tCSP
4
4
s
Recover Time From RY/BY
—tRB
0
0
ns
RESET Pulse Width
tRP
500
500
ns
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