- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377936 > MBM29DL162TD (Fujitsu Limited) 16M (2M x 8/1M x 16) BIT Dual Operation PDF資料下載
參數(shù)資料
| 型號： | MBM29DL162TD |
| 廠商： | Fujitsu Limited |
| 英文描述： | 16M (2M x 8/1M x 16) BIT Dual Operation |
| 中文描述： | 16米（2米x 8/1M × 16）位雙操作 |
| 文件頁數(shù)： | 29/75頁 |
| 文件大?。?/td> | 1089K |
| 代理商： | MBM29DL162TD |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁當(dāng)前第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁
MBM29DL16XTE/BE
-70/90/12
29
Notes: 1. Address bits A
11
to A
19
= X = “H” or “L” for all address commands except or Program Address (PA), Sector
Address (SA), and Bank Address (BA).
2. Bus operations are defined in Tables 3 and 4.
3. RA =
Address of the memory location to be read
PA =
Address of the memory location to be programmed
Addresses are latched on the falling edge of the write pulse.
SA =
Address of the sector to be erased. The combination of A
19
, A
18
, A
17
, A
16
, A
15
, A
14
, A
13
, and A
12
will
uniquely select any sector.
BA =
Bank Address (A
15
to A
19
)
4. RD =
Data read from location RA during read operation.
PD =
Data to be programmed at location PA. Data is latched on the falling edge of write pulse.
5. SPA = Sector group address to be protected. Set sector group address (SGA) and (A
6
, A
1
, A
0
) = (0, 1, 0).
SD =
Sector group protection verify data. Output 01H at protected sector group addresses and output
00H at unprotected sector group addresses.
6. HRA = Address of the Hi-ROM area
29DL16XTE (Top Boot Type)
Word Mode: 0F8000H to 0FFFFFH
Byte Mode: 1F0000H to 1FFFFFH
29DL16XBE (Bottom Boot Type) Word Mode: 000000H to 007FFFH
Byte Mode: 000000H to 00FFFFH
7. HRBA =Bank Address of the Hi-ROM area
29DL16XTE (Top Boot Type)
:A
15
= A
16
= A
17
= A
18
= A
19
= 1
29DL16XBE (Bottom Boot Type) :A
15
= A
16
= A
17
= A
18
= A
19
= 0
8. The system should generate the following address patterns:
Word Mode: 555H or 2AAH to addresses A
0
to A
10
Byte Mode: AAAH or 555H to addresses A
–1
and A
0
to A
10
9. Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.
*1:This command is valid while Fast Mode.
*2:This command is valid while RESET = V
ID
.
*3:The valid addresses are A
6
to A
0
.
*4:This command is valid while Hi-ROM mode.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29DL162TE70PBT | 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162TE70PFTN | 16M (2M x 8/1M x 16) BIT Dual Operation |
| MBM29DL162TE70PFTR | 16M (2M x 8/1M x 16) BIT Dual Operation |
| MBM29DL162TE70TN | 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162TE70TR | 16M (2M X 8/1M X 16) BIT Dual Operation |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29DL162TD-70PBT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162TD-70PFTN | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162TD-70PFTR | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162TD-90PBT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
| MBM29DL162TD-90PFTN | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。