參數(shù)資料
型號(hào)： MBM29DL163TE70PFTN
廠商： Fujitsu Limited
英文描述： 16M (2M x 8/1M x 16) BIT Dual Operation
中文描述： 16米（2米x 8/1M × 16）位雙操作
文件頁(yè)數(shù)： 42/75頁(yè)
文件大?。?/td> 1089K
代理商： MBM29DL163TE70PFTN
MBM29DL16XTE/BE
-70/90/12
42
Table 15 Common Flash Memory Interface Code
Description
A
0
to A
6
DQ
0
to
DQ
15
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
Query-unique ASCII string
“QRY”
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
Primary OEM Command Set
2h: AMD/FJ standard type
Address for Primary Extend-
ed Table
Alternate OEM Command
Set (00h = not applicable)
Address for Alternate OEM
Extended Table
V
CC
Min. (write/erase)
D7-4: volt, D3-0: 100 mvolt
V
CC
Max. (write/erase)
D7-4: volt, D3-0: 100 mvolt
V
PP
Min. voltage
V
PP
Max. voltage
Typical timeout per single
byte/word write 2
N
μ
s
Typical timeout for Min. size
buffer write 2
N
μ
s
Typical timeout per individual
block erase 2
N
m
s
Typical timeout for full chip
erase 2
N
m
s
Max. timeout for byte/word
write 2
N
times typical
Max. timeout for buffer write
2
N
times typical
Max. timeout per individual
block erase 2
N
times typical
Max. timeout for full chip
erase 2
N
times typical
Device Size = 2
N
byte
Flash Device Interface de-
scription
Max. number of byte in
multi-byte write = 2
N
Number of Erase Block Re-
gions within device
1Bh
0027h
1Ch
0036h
1Dh
1Eh
0000h
0000h
1Fh
0004h
20h
0000h
21h
000Ah
22h
0000h
23h
0005h
24h
0000h
25h
0004h
26h
0000h
27h
28h
29h
2Ah
2Bh
0015h
0002h
0000h
0000h
0000h
2Ch
0002h
Erase Block Region 1 Infor-
mation
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
0007h
0000h
0020h
0000h
001Eh
0000h
0000h
0001h
Erase Block Region 2 Infor-
mation
Description
A
0
to A
6
DQ
0
to
DQ
15
0050h
0052h
0049h
0031h
0032h
Query-unique ASCII string
“PRI”
40h
41h
42h
43h
44h
Major version number, ASCII
Minor version number, ASCII
Address Sensitive Unlock
0h = Required
1h = Not Required
Erase Suspend
0h = Not Supported
1h = To Read Only
2h = To Read & Write
Sector Protection
0h = Not Supported
X = Number of sectors in per
group
Sector Temporary Unprotec-
tion
00h = Not Supported
01h = Supported
Sector Protection Algorithm
Number of Sector for Bank 2
00h = Not Supported
1Fh = MBM29DL161TE
1Ch = MBM29DL162TE
18h = MBM29DL163TE
10h = MBM29DL164TE
1Fh = MBM29DL161BE
1Ch = MBM29DL162BE
18h = MBM29DL163BE
10h = MBM29DL164BE
Burst Mode Type
00h = Not Supported
Page Mode Type
00h = Not Supported
ACC (Acceleration) Supply
Minimum
00h = Not Supported,
D7-4: volt, D3-0: 100 mvolt
ACC (Acceleration) Supply
Maximum
00h = Not Supported,
D7-4: volt, D3-0: 100 mvolt
Boot Type
02h = MBM29DL16XBE
03h = MBM29DL16XTE
Program Suspend
00h = Not Supported
01h = Supported
45h
0000h
46h
0002h
47h
0001h
48h
0001h
49h
0004h
4Ah
00XXh
4Bh
0000h
4Ch
0000h
4Dh
0085h
4Eh
0095h
4Fh
00XXh
50h
0001h
相關(guān)PDF資料
PDF描述
MBM29DL163TE70PFTR 16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL163TE70TN 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL163TE70TR 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL162TD 16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL162TE70PBT 16M (2M X 8/1M X 16) BIT Dual Operation
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29DL163TE70PFTR 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:16M (2M x 8/1M x 16) BIT Dual Operation
MBM29DL163TE70TN 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL163TE-70TN 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL163TE70TR 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT Dual Operation
MBM29DL163TE-70TR 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
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