參數(shù)資料
型號: MBM29DL324TE90TR
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 32M (4M x 8/2M x 16) BIT Dual Operation
中文描述: 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝: PLASTIC, REVERSE, TSOP1-48
文件頁數(shù): 70/80頁
文件大?。?/td> 1588K
代理商: MBM29DL324TE90TR
MBM29DL32XTE/BE
-80/90/12
70
555h/AAh
2AAh/55h
555h/AAh
555h/80h
555h/10h
2AAh/55h
555h/AAh
2AAh/55h
555h/AAh
555h/80h
2AAh/55h
Additional sector
erase commands
are optional.
Write Erase Command
Sequence
(See below)
Data Polling or Toggle Bit
Successfully Completed
Chip Erase Command Sequence*
(Address/Command):
Individual Sector/Multiple Sector*
Erase Command Sequence
(Address/Command):
Sector Address/30h
Sector Address/30h
Sector Address/30h
Erasure Completed
Start
Figure 23 Embedded Erase
TM
Algorithm
EMBEDDED ALGORITHMS
* :The sequence is applied for
×
16 mode.
The addresses differ from
×
8 mode.
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相關代理商/技術參數(shù)
參數(shù)描述
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