參數(shù)資料
型號(hào)： MBM29DL640E12TR
廠商： FUJITSU LTD
元件分類： DRAM
英文描述： 64 M (8 M X 8/4 M X 16) BIT Dual Operation
中文描述： 4M X 16 FLASH 3V PROM, 120 ns, PDSO48
封裝： PLASTIC, REVERSE, TSOP1-48
文件頁(yè)數(shù)： 30/71頁(yè)
文件大?。?/td> 913K
代理商： MBM29DL640E12TR
MBM29DL640E
80/90/12
30
zero data pattern prior to electrical erase (Preprogram function) . The system is not required to provide any
controls or timings during these operations.
The system can determine the status of the erase operation by using DQ
7
(Data Polling) , DQ
6
(Toggle Bit) or
RY/BY. The chip erase begins on the rising edge of the last CE or WE, whichever happens first in the command
sequence, and terminates when the data on DQ
7
is “1” (see Write Operation Status section), at which time the
device returns to the read mode.
Chip Erase Time; Sector Erase Time
×
All sectors
+
Chip Program Time (Preprogramming)
Figure 23 illustrates the Embedded Erase
TM
Algorithm using typical command strings and bus operations.
Sector Erase
Sector erase is a six bus cycle operation. There are two “unlock” write cycles. These are followed by writing the
“set-up” command. Two more “unlock” write cycles are then followed by the Sector Erase command. The sector
address (any address location within the desired sector) is latched on the falling edge of CE or WE, whichever
happens later, while the command (Data
=
30h) is latched on the rising edge of CE or WE, whichever happens
first. After time-out of “t
TOW
” from the rising edge of the last sector erase command, the sector erase operation
begins.
Multiple sectors may be erased concurrently by writing the six bus cycle operations on Table 4. This sequence
is followed by writes of the Sector Erase command to addresses in other sectors desired to be concurrently
erased. The time between writes must be less than “t
TOW
”. Otherwise, that command will not be accepted and
erasure will not start. It is recommended that processor interrupts be disabled during this time to guarantee such
a condition. The interrupts can reoccur after the last Sector Erase command is written. A time-out of “t
TOW
” from
the rising edge of last CE or WE, whichever happens first, will initiate the execution of the Sector Erase command
(s) . If another falling edge of CE or WE, whichever happens first occurs within the “t
TOW
” time-out window, the
timer is reset (monitor DQ
3
to determine if the sector erase timer window is still open, see section DQ
3
, Sector
Erase Timer). Resetting the device once execution has begun will corrupt the data in the sector. In that case,
restart the erase on those sectors and allow them to complete (refer to Write Operation Status section for Sector
Erase Timer operation). Loading the sector erase buffer may be done in any sequence and with any number of
sectors (0 to 141) .
Sector erase does not require the user to program the device before erase. The device automatically programs
all memory locations in the sector (s) to be erased prior to electrical erase (Preprogram function) . When erasing
a sector, the rest remain unaffected. The system is not required to provide any controls or timings during these
operations.
The system can determine the status of the erase operation by using DQ
7
(Data Polling) , DQ
6
(Toggle Bit) or
RY/BY.
The sector erase begins after the “t
TOW
” time-out from the rising edge of CE or WE, whichever happens first, for
the last sector erase command pulse and terminates when the data on DQ
7
is “1” (see Write Operation Status
section), at which time the device returns to the read mode. Data polling and Toggle Bit must be performed at
an address within any of the sectors being erased.
Multiple Sector Erase Time
=
[Sector Erase Time
+
Sector Program Time (Preprogramming) ]
×
Number of
Sector Erase
In case of multiple sector erase across bank boundaries, a read from the bank (read-while-erase) to which
sectors being erased belong cannot be performed.
Figure 23 illustrates the Embedded Erase
TM
Algorithm using typical command strings and bus operations.
Erase Suspend/Resume
The Erase Suspend command allows the user to interrupt Sector Erase operation and then reads data from or
programs to a sector not being erased. This command is applicable ONLY during the Sector Erase operation
which includes the time-out period for sector erase. Writing the Erase Suspend command (B0h) during the Sector
Erase time-out results in immediate termination of the time-out period and suspension of the erase operation.
相關(guān)PDF資料
PDF描述
MBM29DL640E80 64 M (8 M X 8/4 M X 16) BIT Dual Operation
MBM29DL640E80PBT 64 M (8 M X 8/4 M X 16) BIT Dual Operation
MBM29DL640E80TN 64 M (8 M X 8/4 M X 16) BIT Dual Operation
MBM29DL640E80TR 64 M (8 M X 8/4 M X 16) BIT Dual Operation
MBM29DL640E90 64 M (8 M X 8/4 M X 16) BIT Dual Operation
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29DL640E80 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64 M (8 M X 8/4 M X 16) BIT Dual Operation
MBM29DL640E80PBT 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64 M (8 M X 8/4 M X 16) BIT Dual Operation
MBM29DL640E80TN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64 M (8 M X 8/4 M X 16) BIT Dual Operation
MBM29DL640E80TR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64 M (8 M X 8/4 M X 16) BIT Dual Operation
MBM29DL640E90 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64 M (8 M X 8/4 M X 16) BIT Dual Operation
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*