參數(shù)資料
型號(hào): MBM29DL640E12TR
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 64 M (8 M X 8/4 M X 16) BIT Dual Operation
中文描述: 4M X 16 FLASH 3V PROM, 120 ns, PDSO48
封裝: PLASTIC, REVERSE, TSOP1-48
文件頁(yè)數(shù): 44/71頁(yè)
文件大小: 913K
代理商: MBM29DL640E12TR
MBM29DL640E
80/90/12
44
I
ERASE AND PROGRAMMING PERFORMANCE
I
TSOP (I) PIN CAPACITANCE
Note : Test conditions Ta
=
25
°
C, f
=
1.0 MHz
I
FBGA PIN CAPACITANCE
Note : Test conditions Ta
=
25
°
C, f
=
1.0 MHz
Parameter
Limits
Unit
Comments
Min.
Typ.
Max.
Sector Erase Time
1
10
s
Excludes programming time
prior to erasure
Word Programming Time
16
360
μ
s
μ
s
Excludes system-level
overhead
Byte Programming Time
8
300
Chip Programming Time
200
s
Excludes system-level
overhead
Program/Erase Cycle
100,000
cycle
Parameter
Symbol
Condition
Value
Unit
Typ.
Max.
Input Capacitance
C
IN
V
IN
=
0
V
OUT
=
0
V
IN
=
0
V
IN
=
0
6
7.5
pF
Output Capacitance
C
OUT
8.5
12
pF
Control Pin Capacitance
C
IN2
8
11
pF
WP/ACC Pin Capacitance
C
IN3
9
11
pF
Parameter
Symbol
Condition
Value
Unit
Typ.
Max.
Input Capacitance
C
IN
V
IN
=
0
V
OUT
=
0
V
IN
=
0
V
IN
=
0
TBD
TBD
pF
Output Capacitance
C
OUT
TBD
TBD
pF
Control Pin Capacitance
C
IN2
TBD
TBD
pF
WP/ACC Pin Capacitance
C
IN3
TBD
TBD
pF
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參數(shù)描述
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MBM29DL640E80TR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64 M (8 M X 8/4 M X 16) BIT Dual Operation
MBM29DL640E90 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64 M (8 M X 8/4 M X 16) BIT Dual Operation