參數(shù)資料
型號: MBM29DL640E80PBT
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 64 M (8 M X 8/4 M X 16) BIT Dual Operation
中文描述: 4M X 16 FLASH 3V PROM, 80 ns, PBGA63
封裝: PLASTIC, FBGA-63
文件頁數(shù): 41/71頁
文件大?。?/td> 913K
代理商: MBM29DL640E80PBT
MBM29DL640E
80/90/12
41
2.
AC Characteristics
Read Only Operations Characteristics
Note : Test Conditions :
Output Load : 1 TTL gate and 30 pF (MBM29DL640E-80)
1 TTL gate and 100 pF (MBM29DL640E-90/120)
Input rise and fall times : 5 ns
Input pulse levels : 0.0 V to 3.0 V
Timing measurement reference level
Input : 1.5 V
Output : 1.5 V
Parameter
Symbol
Condition
Value (Note)
Unit
80
90
12
JEDEC Standard
Min. Max. Min. Max. Min. Max.
90
Read Cycle Time
t
AVAV
t
RC
80
120
ns
Address to Output Delay
t
AVQV
t
ACC
CE
=
V
IL
OE
=
V
IL
OE
=
V
IL
80
90
120
ns
Chip Enable to Output Delay
t
ELQV
t
CE
80
90
120
ns
Output Enable to Output Delay
t
GLQV
t
OE
30
35
50
ns
Chip Enable to Output High-Z
t
EHQZ
t
DF
25
30
30
ns
Output Enable to Output High-Z
t
GHQZ
t
DF
25
30
30
ns
Output Hold Time From Addresses,
CE or OE, Whichever Occurs First
t
AXQX
t
OH
0
0
0
ns
RESET Pin Low to Read Mode
t
READY
20
20
20
μ
s
CE to BYTE Switching Low or High
t
ELFL
t
ELFH
5
5
5
ns
C
L
3.3 V
Diodes
=
IN3064
or equivalent
2.7 k
Device
Under
Test
IN3064
or equivalent
6.2 k
Figure 4
Test Conditions
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29DL640E80TN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64 M (8 M X 8/4 M X 16) BIT Dual Operation
MBM29DL640E80TR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64 M (8 M X 8/4 M X 16) BIT Dual Operation
MBM29DL640E90 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64 M (8 M X 8/4 M X 16) BIT Dual Operation
MBM29DL640E90PBT 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64 M (8 M X 8/4 M X 16) BIT Dual Operation
MBM29DL640E90TN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64 M (8 M X 8/4 M X 16) BIT Dual Operation