參數(shù)資料
型號(hào)： MBM29DL640E90PBT
廠商： FUJITSU LTD
元件分類： DRAM
英文描述： 64 M (8 M X 8/4 M X 16) BIT Dual Operation
中文描述： 4M X 16 FLASH 3V PROM, 90 ns, PBGA63
封裝： PLASTIC, FBGA-63
文件頁(yè)數(shù)： 22/71頁(yè)
文件大?。?/td> 913K
代理商： MBM29DL640E90PBT
MBM29DL640E
80/90/12
22
Description
A
6
to A
0
DQ
15
to DQ
0
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
Query-unique ASCII string “QRY”
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
Primary OEM Command Set
2h : AMD/FJ standard type
Address for Primary Extended Table
Alternate OEM Command Set
(00h
=
not applicable)
Address for Alternate OEM Extended
Table
V
CC
Min. (write/erase)
D7-4 : 1 V, D3-0 : 100 mV
V
CC
Max. (write/erase)
D7-4 : 1 V, D3-0 : 100 mV
V
PP
Min. voltage
V
PP
Max. voltage
Typical timeout per single byte/word write
2
N
μ
s
Typical timeout for Min. size
buffer write 2
N
μ
s
Typical timeout per individual block erase
2
N
ms
Typical timeout for full chip erase 2
N
ms
Max. timeout for byte/word write 2
N
times
typical
Max. timeout for buffer write 2
N
times
typical
Max. timeout per individual block erase 2
N
times typical
Max. timeout for full chip erase 2
N
times
typical
Device Size
=
2
N
byte
Flash Device Interface
description
×
:
×
8 /
×
16
Max. number of bytes in
multi-byte write
=
2
N
Number of Erase Block Regions within
device
Erase Block Region 1 Information
bit 0 to 15: y
=
number of sectors
bit 16 to 31: z
=
size
(z
×
256 bytes)
Erase Block Region 2 Information
bit 0 to 15: y
=
number of sectors
bit 16 to 31: z
=
size
(z
×
256 bytes)
Erase Block Region 3 Information
bit 0 to 15: y
=
number of sectors
bit 16 to 31: z
=
size
(z
×
256 bytes)
1Bh
0027h
1Ch
0036h
1Dh
1Eh
0000h
0000h
1Fh
0004h
20h
0000h
21h
000Ah
22h
0000h
23h
0005h
24h
0000h
25h
0004h
26h
0000h
27h
28h
29h
2Ah
2Bh
0017h
0002h
0000h
0000h
0000h
2Ch
0003h
2Dh
2Eh
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
0007h
0000h
0020h
0000h
007Dh
0000h
0000h
0001h
0007h
0000h
0020h
0000h
Query-unique ASCII string “PRI”
40h
41h
42h
43h
44h
0050h
0052h
0049h
0031h
0033h
Major version number, ASCII
Minor version number, ASCII
Address Sensitive Unlock
0h
=
Required
1h
=
Not Required
Erase Suspend
0h
=
Not Supported
1h
=
To Read Only
2h
=
To Read & Write
Sector Protection
0h
=
Not Supported
X
=
Number of sectors per group
Sector Temporary
Unprotection
00h
=
Not Supported
01h
=
Supported
Sector Protection Algorithm
Simultaneous Operation
00h
=
Not Supported
X
=
Total number of sectors in all banks
except Bank 1
Burst Mode Type
00h
=
Not Supported
Page Mode Type
00h
=
Not Supported
ACC (Acceleration) Supply
Minimum
00h
=
Not Supported,
D7-4 : 1 V, D3-0 : 100 mV
ACC (Acceleration) Supply
Maximum
00h
=
Not Supported,
D7-4 : 1 V, D3-0 : 100 mV
Boot Type
Program Suspend
00h
=
Not Supported
01h
=
Supported
Bank Organization
00h
=
If data at 4Ah is zero.
X
=
Number of Banks
Bank A Region Information
X
=
Number of sectors in Bank A
Bank B Region Information
X
=
Number of sectors in Bank B
Bank C Region Information
X
=
Number of sectors in Bank C
Bank D Region Information
X
=
Number of sectors in Bank D
45h
0000h
46h
0002h
47h
0001h
48h
0001h
49h
0004h
4Ah
0077h
4Bh
0000h
4Ch
0000h
4Dh
0085h
4Eh
0095h
4Fh
0001h
50h
0001h
57h
0004h
58h
0017h
59h
0030h
5Ah
0030h
5Bh
0017h
Description
A
6
to A
0
DQ
15
to DQ
0
Table 8
Common Flash Memory Interface Code
相關(guān)PDF資料
PDF描述
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參數(shù)描述
MBM29DL640E90TN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64 M (8 M X 8/4 M X 16) BIT Dual Operation
MBM29DL640E90TN-LE1 制造商:Spansion 功能描述:
MBM29DL640E90TR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64 M (8 M X 8/4 M X 16) BIT Dual Operation
MBM29DL64DF 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT
MBM29DL64DF-70 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT
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