- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377942 > MBM29F017A (Fujitsu Limited) 2.2A, 2.7-5.5V Single Hot-Swap IC Hi-Side MOSFET, Fault Report, Act-High Enable 8-SOIC -40 to 85 PDF資料下載
參數(shù)資料
| 型號： | MBM29F017A |
| 廠商： | Fujitsu Limited |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | 2.2A, 2.7-5.5V Single Hot-Swap IC Hi-Side MOSFET, Fault Report, Act-High Enable 8-SOIC -40 to 85 |
| 中文描述： | 1,600（2米× 8）位 |
| 文件頁數(shù)： | 14/47頁 |
| 文件大?。?/td> | 469K |
| 代理商： | MBM29F017A |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁當(dāng)前第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁
14
MBM29F017A
-70/-90/-12
Temporary Sector Group Unprotection
This feature allows temporary unprotection of previously protected sector groups of the MBM29F017A device
in order to change data. The Sector Group Unprotection mode is activated by setting the RESET pin to high
voltage (12 V). During this mode, formerly protected sector groups can be programmed or erased by selecting
the sector group addresses. Once the 12 V is taken away from the RESET pin, all the previously protected sector
groups will be protected again. Refer to Figures 13 and 20.
Notes:
1. Bus operations are defined in Table 2.
2. RA = Address of the memory location to be read.
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge
of the WE pulse.
SA = Address of the sector to be erased. The combination of A
20
, A
19
, A
18
, A
17
, and A
16
will uniquely select
any sector.
3. RD = Data read from location RA during read operation.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE.
4. Read and Byte program functions to non-erasing sectors are allowed in the Erase Suspend mode.
* :Either of the two reset commands will reset the device.
Command Definitions
Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them in the improper sequence will reset the device to the
read mode. Table 6 defines the valid register command sequences. Note that the Erase Suspend (B0H) and
Erase Resume (30H) commands are valid only while the Sector Erase operation is in progress. Moreover, both
Read/Reset commands are functionally equivalent, resetting the device to the read mode.
Table 6 MBM29F017A Command Definitions
Command
Sequence
Bus
Write
Cycles
Req'd
First Bus
Write Cycle
Second Bus
Write Cycle
Third Bus
Write Cycle
Fourth Bus
Read/Write
Cycle
Fifth Bus
Write Cycle
Sixth Bus
Write Cycle
Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data
Read/Reset*
1
XXXH F0H
—
—
—
—
—
—
—
—
—
—
Reset/Read*
3
XXXH AAH XXXH
55H
XXXH F0H
RA
RD
—
—
—
—
Autoselect
3
XXXH AAH XXXH
55H
XXXH
90H
—
—
—
—
—
—
Byte Program
4
XXXH AAH XXXH
55H
XXXH A0H
PA
PD
—
—
—
—
Chip Erase
6
XXXH AAH XXXH
55H
XXXH
80H
XXXH AAH XXXH
55H
XXXH
10H
Sector Erase
6
XXXH AAH XXXH
55H
XXXH
80H
XXXH AAH XXXH
55H
SA
30H
Sector Erase
Suspend
1
Erase can be suspended during sector erase with Addr (“H” or “L”). Data (B0H)
Sector Erase
Resume
1
Erase can be resumed after suspend with Addr (“H” or “L”). Data (30H)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29F017A-70PFTN | 16M (2M X 8) BIT |
| MBM29F017A-70PFTR | 16M (2M X 8) BIT |
| MBM29F017A-90PFTN | 2.2A, 2.7-5.5V Single Hot-Swap IC Hi-Side MOSFET, Fault Report, Act-High Enable 8-PDIP -40 to 85 |
| MBM29F017A-90PFTR | 16M (2M X 8) BIT |
| MBM29F017A-90PNS | 16M (2M X 8) BIT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29F017A-12 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M x 8) BIT |
| MBM29F017A-12PFTN | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8) BIT |
| MBM29F017A-12PFTR | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M x 8) BIT |
| MBM29F017A-12PNS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M x 8) BIT |
| MBM29F017A-70 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 16M (2M x 8) BIT |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。