參數(shù)資料
型號(hào): MBM29F040C-55PD
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 4M (512K X 8) BIT
中文描述: 512K X 8 FLASH 5V PROM, 55 ns, PQCC32
封裝: PLASTIC, LCC-32
文件頁數(shù): 22/40頁
文件大?。?/td> 424K
代理商: MBM29F040C-55PD
22
MBM29F040C
-55/-70/-90
I
AC CHARACTERISTICS
Read Only Operations Characteristics
Note:
1. Test Conditions:
Output Load: 1 TTL gate and 30 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V to3.0 V
Timing measurement reference level
Input: 1.5 V
Output: 1.5 V
Parameter
Symbols
Description
Test Setup
-55
(Note1)
-70
(Note2)
-90
(Note2)
Unit
JEDEC
Standard
t
AVAV
t
RC
Read Cycle Time
Min.
55
70
90
ns
t
AVQV
t
ACC
Address to Output Delay
CE = V
IL
OE = V
IL
Max.
55
70
90
ns
t
ELQV
t
CE
Chip Enable to Output Delay
OE = V
IL
Max.
55
70
90
ns
t
GLQV
t
OE
Output Enable to Output Delay
Max.
30
30
35
ns
t
EHQZ
t
DF
Chip Enable to Output HIGH-Z
Max.
20
20
20
ns
t
GHQZ
t
DF
Output Enable to Output HIGH-Z
Max.
20
20
20
ns
t
AXQX
t
OH
Output Hold Time From
Addresses,
CE or OE, Whichever Occurs First
Min.
0
0
0
ns
Figure 4 Test Conditions
C
L
5.0 V
Diodes = IN3064
or Equivalent
2.7 k
Device
Under
Test
IN3064
or Equivalent
6.2 k
Note:
1.C
L
= 30 pF including jig capacitance
2.C
L
= 100 pF including jig capacitance
Note:
2. Test Conditions:
Oput Load: 1 TTL gate and 100 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.45 V to 2.4 V
Timing measurement reference level
Input: 0.8 and 2.0 V
Output: 0.8 and 2.0 V
相關(guān)PDF資料
PDF描述
MBM29F040C-55PFTN Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC 0 to 85
MBM29F040C-55PFTR Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC 0 to 85
MBM29F040C-70 Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC 0 to 85
MBM29F040C-70PD Replaced by TPS2041B : 0.7A, 2.7-5.5V Single Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC 0 to 85
MBM29F040C-70PFTN Single-Channel Current-Limited Power Distribution Switch 8-SOIC -40 to 85
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29F040C-55PFTN 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY 4M (512K x 8) BIT
MBM29F040C-55PFTR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT
MBM29F040C-70 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT
MBM29F040C-70PD 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT
MBM29F040C70PDER 制造商:FUJITSU 功能描述: