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參數(shù)資料
| 型號： | MBM29F080AC-55PFTR |
| 廠商： | Fujitsu Limited |
| 英文描述： | HEX DIE SET,.068/.213/.255 |
| 中文描述： | 8米（1米× 8）位 |
| 文件頁數(shù)： | 14/47頁 |
| 文件大?。?/td> | 564K |
| 代理商： | MBM29F080AC-55PFTR |
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14
MBM29F080A
-55/-70/-90
Read/Reset Command
The read or reset operation is initiated by writing the read/reset command sequence into the command register.
Microprocessor read cycles retrieve array data from the memory. The device remains enabled for reads until the
command register contents are altered.
The device will automatically power-up in the read/reset state. In this case, a command sequence is not required
to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures that no
spurious alteration of the memory content occurs during the power transition. Refer to the AC Read
Characteristics and Waveforms for the specific timing parameters.
Autoselect Command
Flash memories are intended for use in applications where the local CPU alters memory contents. As such,
manufacture and device codes must be accessible while the device resides in the target system. PROM
programmers typically access the signature codes by raising A
9
to a high voltage. However, multiplexing high
voltage onto the address lines is not generally desirable system design practice.
The device contains an autoselect command operation to supplement traditional PROM programming
methodology. The operation is initiated by writing the autoselect command sequence into the command register.
Following the command write, a read cycle from address XX00H retrieves the manufacture code of 04H. A read
cycle from address XX01H returns the device code D5H. (See Table 3).
All manufacturer and device codes will exhibit odd parity with the DQ
7
defined as the parity bit.
Sector state (protection or unprotection) will be informed by address XX02H.
Scanning the sector group addresses (A
17
, A
18
, A
19
) while (A
6
, A
1
, A
0
) = (0, 1, 0) will produce a logical “1” at
device output DQ
0
for a protected sector group.
To terminate the operation, it is necessary to write the read/reset command sequence into the register and also
to write the Autoselect command during the operation, execute it after writing Read/Reset command sequence.
Byte Programming
The device is programmed on a byte-by-byte basis. Programming is a four bus cycle operation. There are two
“unlock” write cycles. These are followed by the program set-up command and data write cycles. Addresses are
latched on the falling edge of CE or WE, whichever happens later and the data is latched on the rising edge of
CE or WE, whichever happens first. The rising edge of CE or WE (whichever happens first) begins programming.
Upon executing the Embedded Program Algorithm command sequence, the system is notrequired to provide
further controls or timings. The device will automatically provide adequate internally generated program pulses
and verify the programmed cell margin.
This automatic programming operation is completed when the data on DQ
7
is equivalent to data written to this
bit at which time the device returns to the read mode and addresses are no longer latched. (See Table 7, Hardware
Sequence Flags.) Therefore, the device requires that a valid address to the device be supplied by the system
at this particular instance of time. Data Polling must be performed at the memory location which is being
programmed.
Any commands written to the chip during this period will be ignored. If a hardware reset occurs during the
programming operation, it is impossible to guarantee the data are being written.
Programming is allowed in any sequence and across sector boundaries. Beware that a data “0” cannot be
programmed back to a “1”. Attempting to do so may either hang up the device or result in an apparent success
according to the data polling algorithm but a read from reset/read mode will show that the data is still “0”. Only
erase operations can convert “0”s to “1”s.
Figure 16 illustrates the Embedded Programming
TM
Algorithm using typical command strings and bus operations.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29F080AC-55PTN | HEX DIE SET,.105/.128/.151 |
| MBM29F080AC-55PTR | HEX DIE SET,.068/.178/.324 |
| MBM29F080AC-70PF | 8M (1M X 8) BIT |
| MBM29F080AC-70PFTN | 8M (1M X 8) BIT |
| MBM29F080AC-70PFTR | RF Coaxial Connector Adapter; Convert From:Straight SMP Jack; Convert To:Straight SMP Jack; Body Plating:Gold; Contact Plating:Gold; Impedance:50ohm; Insulator Material:PTFE; Leaded Process Compatible:Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29F080AC-55PTN | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8) BIT |
| MBM29F080AC-55PTR | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8) BIT |
| MBM29F080AC-70PF | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8) BIT |
| MBM29F080AC-70PFTN | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8) BIT |
| MBM29F080AC-70PFTR | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M X 8) BIT |
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