參數(shù)資料
型號(hào)： MBM29F080AC-55PFTR
廠商： Fujitsu Limited
英文描述： HEX DIE SET,.068/.213/.255
中文描述： 8米（1米× 8）位
文件頁(yè)數(shù)： 3/47頁(yè)
文件大小： 564K
代理商： MBM29F080AC-55PFTR
3
MBM29F080A
-55/-70/-90
I
GENERAL DESCRIPTION
The MBM29F080A is a 8 M-bit, 5.0 V-Only Flash memory organized as 1 M bytes of 8 bits each. The 1 M bytes
of data is divided into 16 sectors of 64 K bytes for flexible erase capability. The 8 bit of data will appear on DQ
0
to DQ
7
. The MBM29F080A is offered in a 48-pin TSOP(I), 40-pin TSOP and 44-pin SOP packages. This device
is designed to be programmed in-system with the standard system 5.0 V V
CC
supply. A 12.0 V V
PP
is not required
for program or erase operations. The device can also be reprogrammed in standard EPROM programmers.
The standard MBM29F080A offers access times between 55 ns and 90 ns allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write
enable (WE), and output enable (OE) controls.
The MBM29F080A is command set compatible with JEDEC standard E
2
PROMs. Commands are written to the
command register using standard microprocessor write timings. Register contents serve as input to an internal
state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses
and data needed for the programming and erase operations. Reading data out of the device is similar to reading
from 12.0 V Flash or EPROM devices.
The MBM29F080A is programmed by executing the program command sequence. This will invoke the Embedded
Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies
proper cell margin. Each sector can be programmed and verified in less than 0.5 seconds. Erase is accomplished
by executing the erase command sequence. This will invoke the Embedded Erase Algorithm which is an internal
algorithm that automatically preprograms the array if it is not already programmed before executing the erase
operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin.
This device also features a sector erase architecture. The sector erase mode allows for sectors of memory to
be erased and reprogrammed without affecting other sectors. A sector is typically erased and verified within 1
second (if already completely preprogrammed). The MBM29F080A is erased when shipped from the factory.
The MBM29F080A device also features hardware sector group protection. This feature will disable both program
and erase operations in any combination of eight sector groups of memory. A sector group consists of four
adjacent sectors grouped in the following pattern: sectors 0-1, 2-3, 4-5, 6-7, 8-9, 10-11, 12-13, and 14-15.
Fujitsu has implemented an Erase Suspend feature that enables the user to put erase on hold for any period of
time to read data from or program data to a non-busy sector. Thus, true background erase can be achieved.
The device features single 5.0 V power supply operation for both read and program functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low V
CC
detector automatically
inhibits write operations during power transitions. The end of program or erase is detected by Data Polling of
DQ
7
, or by the Toggle Bit I feature on DQ
6
or RY/BY output pin. Once the end of a program or erase cycle has
been completed, the device automatically resets to the read mode.
The MBM29F080A also has a hardware RESET pin. When this pin is driven low, execution of any Embedded
Program or Embedded Erase operations will be terminated. The internal state machine will then be reset into
the read mode. The RESET pin may be tied to the system reset circuity. Therefore, if a system reset occurs
during the Embedded Program or Embedded Erase operation, the device will be automatically reset to a read
mode. This will enable the system microprocessor to read the boot-up firmware from the Flash memory.
Fujitsu's Flash technology combines years of EPROM and E
2
PROM experience to produce the highest levels
of quality, reliability, and cost effectiveness. The MBM29F080A memory electrically erases all bits within a sector
simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte at a time using the EPROM
programming mechanism of hot electron injection.
相關(guān)PDF資料
PDF描述
MBM29F080AC-55PTN HEX DIE SET,.105/.128/.151
MBM29F080AC-55PTR HEX DIE SET,.068/.178/.324
MBM29F080AC-70PF 8M (1M X 8) BIT
MBM29F080AC-70PFTN 8M (1M X 8) BIT
MBM29F080AC-70PFTR RF Coaxial Connector Adapter; Convert From:Straight SMP Jack; Convert To:Straight SMP Jack; Body Plating:Gold; Contact Plating:Gold; Impedance:50ohm; Insulator Material:PTFE; Leaded Process Compatible:Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29F080AC-55PTN 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:8M (1M X 8) BIT
MBM29F080AC-55PTR 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:8M (1M X 8) BIT
MBM29F080AC-70PF 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:8M (1M X 8) BIT
MBM29F080AC-70PFTN 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:8M (1M X 8) BIT
MBM29F080AC-70PFTR 制造商:FUJITSU 制造商全稱(chēng):Fujitsu Component Limited. 功能描述:8M (1M X 8) BIT
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