參數(shù)資料
型號(hào)： MBM29F160BE-55PFTR
廠商： FUJITSU LTD
元件分類： DRAM
英文描述： 16M (2M X 8/1M X 16) BIT
中文描述： 2M X 8 FLASH 5V PROM, 55 ns, PDSO48
封裝： PLASTIC, REVERSE, TSOP1-48
文件頁(yè)數(shù)： 2/53頁(yè)
文件大小： 251K
代理商： MBM29F160BE-55PFTR
MBM29F160TE
-55/-70/-90
/MBM29F160BE
-55/-70/-90
2
(Continued)
The MBM29F160TE/BE is programmed by executing the program command sequence. This will invoke the
Embedded Program
TM
* Algorithm which is an internal algorithm that automatically times the program pulse
widths and verifies proper cell margins. Typically, each sector can be programmed and verified in about 0.5
seconds. Erase is accomplished by executing the erase command sequence. This will invoke the Embedded
Erase
TM
* Algorithm which is an internal algorithm that automatically preprograms the array if it is not already
programmed before executing the erase operation. During erase, the device automatically times the erase pulse
widths and verifies proper cell margins.
Any individual sector is typically erased and verified in 1.0 second. (If already preprogrammed.)
The device also features a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The MBM29F160TE/BE is erased when shipped from the factory.
The device features single 5.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low V
CC
detector automatically
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ
7
,
by the Toggle Bit feature on DQ
6
, or the RY/BY output pin. Once the end of a program or erase cycle has been
comleted, the device internally resets to the read mode.
The MBM29F160TE/BE also has a hardware RESET pin. When this pin is driven low, execution of any Embedded
Program Algorithm or Embedded Erase Algorithm is terminated. The internal state machine is then reset to the
read mode. The RESET pin may be tied to the system reset circuitry. Therefore, if a system reset occurs during
the Embedded Program Algorithm or Embedded Erase Algorithm, the device is automatically reset to the read
mode and will have erroneous data stored in the address locations being programmed or erased. These locations
need re-writing after the Reset. Resetting the device enables the system’s microprocessor to read the boot-up
firmware from the Flash memory.
Fujitsu’s Flash technology combines years of Flash memory manufacturing experience to produce the highest
levels of quality, reliability, and cost effectiveness. The MBM29F160TE/BE memory electrically erases all bits
within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word
at a time using the EPROM programming mechanism of hot electron injection.
* :
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
相關(guān)PDF資料
PDF描述
MBM29F160BE-55TN 16M (2M X 8/1M X 16) BIT
MBM29F160BE-55TR 16M (2M X 8/1M X 16) BIT
MBM29F160BE-70PFTN 16M (2M X 8/1M X 16) BIT
MBM29F160BE-70PFTR 16M (2M X 8/1M X 16) BIT
MBM29F160BE-70TN 16M (2M X 8/1M X 16) BIT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29F160BE-55TN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT
MBM29F160BE-55TR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT
MBM29F160BE-70 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT
MBM29F160BE-70PFTN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT
MBM29F160BE-70PFTR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (2M X 8/1M X 16) BIT
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