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參數(shù)資料
| 型號： | MBM29F200TC-90PFTN |
| 廠商： | FUJITSU LTD |
| 元件分類： | DRAM |
| 英文描述： | 2M (256K X 8/128K X 16) BIT |
| 中文描述： | 128K X 16 FLASH 5V PROM, 90 ns, PDSO48 |
| 封裝： | PLASTIC, TSOP1-48 |
| 文件頁數(shù)： | 1/48頁 |
| 文件大小： | 508K |
| 代理商： | MBM29F200TC-90PFTN |
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DS05-20867-3E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
2M (256K
×
8/128K
×
16) BIT
MBM29F200TC
-55/-70/-90
/MBM29F200BC
-55/-70/-90
I
FEATURES
Single 5.0 V read, write, and erase
Minimizes system level power requirements
Compatible with JEDEC-standard commands
Uses same software commands as E
2
PROMs
Compatible with JEDEC-standard world-wide pinouts
48-pin TSOP (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)
44-pin SOP (Package suffix: PF)
Minimum 100,000 write/erase cycles
High performance
55 ns maximum access time
Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and three 64K bytes.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
Boot Code Sector Architecture
T = Top sector
B = Bottom sector
Embedded Erase
TM
Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program
TM
Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
Low Vcc write inhibit
≤
3.2 V
Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
Hardware RESET pin
Resets internal state machine to the read mode
Sector protection
Hardware method disables any combination of sectors from write or erase operations
Temporary sector unprotection
Hardware method temporarily enables any combination of sectors from write on erase operations.
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
相關PDF資料 |
PDF描述 |
|---|---|
| MBM29F200TC-90PFTR | 2M (256K X 8/128K X 16) BIT |
| MBM29F400BA | 4M (512K×8/256K ×16) Bit Flash Memory(4M 單5V 電源電壓512K×8/256K ×16位閃速存儲器) |
| MBM29F400TA | 4M (512K×8/256K ×16) Bit Flash Memory(4M 單5V 電源電壓512K×8/256K ×16位閃速存儲器) |
| MBM29F400TC-90PFTN | Quad Current-Limited Power Distribution Switches 16-SOIC -40 to 85 |
| MBM29F400BC-55 | PP75-180-RETAINING PIN RoHS Compliant: Yes |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29F200TC-90PFTR | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:2M (256K X 8/128K X 16) BIT |
| MBM29F400BC-55 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 4M (512K x 8/256K x 16) BIT |
| MBM29F400BC-55PF | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 4M (512K x 8/256K x 16) BIT |
| MBM29F400BC-55PFTN | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 4M (512K x 8/256K x 16) BIT |
| MBM29F400BC-55PFTN-S# | 制造商:FUJITSU 功能描述: |
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