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參數(shù)資料
| 型號： | MBM29F400BA |
| 廠商： | Fujitsu Limited |
| 英文描述： | 4M (512K×8/256K ×16) Bit Flash Memory(4M 單5V 電源電壓512K×8/256K ×16位閃速存儲器) |
| 中文描述： | 4分（為512k × 8/256K × 16）位閃存（4分單5V的電源電壓為512k × 8/256K × 16位閃速存儲器） |
| 文件頁數(shù)： | 1/47頁 |
| 文件大小： | 424K |
| 代理商： | MBM29F400BA |
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DS05-20812-3E
FUJITSU SEMICONDUCTOR
DATA SHEET
Embedded Erase
TM
and Embedded Program
TM
are trademarks of Advanced Micro Devices, Inc.
FLASH MEMORY
CMOS
4M (512K
×
8/256K
×
16)
MBM29F400TA/MBM29F400BA
I
DISTINCTIVE CHARACTERISTICS
Single 5.0 V read, write, and erase
Minimizes system level power requirements
Compatible with JEDEC-standard commands
Uses same software commands as E
Compatible with JEDEC-standard word-wide pinouts
48-pin TSOP (Package suffix: PFTN–Normal Bend Type, PFTR–Reversed Bend Type)
44-pin SOP (Package suffix: PF)
Minimum 100,000 write/erase cycles
High performance
70 ns maximum access time
Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and seven 64K bytes.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
Boot Code Sector Architecture
T = Top sector
B = Bottom sector
Embedded Erase
Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded Program
Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Low power consumption
20 mA typical active read current for Byte Mode
28 mA typical active read current for Word Mode
30 mA typical write/erase current
25
μ
A typical standby current
Low V
CC
write inhibit
≤
3.2 V
Sector protection
Hardware method disables any combination of sectors from write or erase operations
Temporary sector unprotection
Hardware method enable temporarily any combination of sectors from write or erase operations.
Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
2
PROMs
TM
TM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29F400TA | 4M (512K×8/256K ×16) Bit Flash Memory(4M 單5V 電源電壓512K×8/256K ×16位閃速存儲器) |
| MBM29F400TC-90PFTN | Quad Current-Limited Power Distribution Switches 16-SOIC -40 to 85 |
| MBM29F400BC-55 | PP75-180-RETAINING PIN RoHS Compliant: Yes |
| MBM29F400BC-55PF | Cable clamp hardware pak, 20 A, black, clamp termination, for plug, 4 pole |
| MBM29F400BC-55PFTN | PP10 PIN CNT #10 TIN |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29F400BC-55 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 4M (512K x 8/256K x 16) BIT |
| MBM29F400BC-55PF | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 4M (512K x 8/256K x 16) BIT |
| MBM29F400BC-55PFTN | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:FLASH MEMORY CMOS 4M (512K x 8/256K x 16) BIT |
| MBM29F400BC-55PFTN-S# | 制造商:FUJITSU 功能描述: |
| MBM29F400BC-55PFTN-SFL(E1) | 制造商:Spansion 功能描述: |
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