參數(shù)資料
型號(hào): MBM29LV002B-10
廠商: Fujitsu Limited
英文描述: 2M (256K ×8) Bit Flash Memory(2M (256K ×8)位 單5V 電源電壓閃速存儲(chǔ)器)
中文描述: 200萬(wàn)(256K × 8)位閃存(200萬(wàn)(256K × 8)位單5V的電源電壓閃速存儲(chǔ)器)
文件頁(yè)數(shù): 29/45頁(yè)
文件大小: 406K
代理商: MBM29LV002B-10
29
MBM29LV002T
-10/-12
/MBM29LV002B
-10/-12
t
WS
t
GHEL
t
WH
t
WHWH1
t
WC
WE
OE
Addresses
Data
t
CP
t
CPH
t
AH
t
DS
t
DH
DQ
7
PD
A0H
D
OUT
CE
5555H
PA
PA
Data Polling
3rd Bus Cycle
t
AS
Figure 8 Alternate CE Controlled Program Operation Timings
Notes:
1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3.
is the output of the complement of the data written to the device.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
DQ
7
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