參數(shù)資料
型號(hào): MBM29LV002B-12
廠商: Fujitsu Limited
英文描述: 2M (256K ×8) Bit Flash Memory(2M (256K ×8)位 單5V 電源電壓閃速存儲(chǔ)器)
中文描述: 200萬(wàn)(256K × 8)位閃存(200萬(wàn)(256K × 8)位單5V的電源電壓閃速存儲(chǔ)器)
文件頁(yè)數(shù): 24/45頁(yè)
文件大小: 406K
代理商: MBM29LV002B-12
24
MBM29LV002T
-10/-12
/MBM29LV002B
-10/-12
Write/Erase/Program Operations
Alternate WE Controlled Writes
Notes:
1. This does not include the preprogramming time.
2. These timings are for Sector Protection operation.
Parameter Symbols
Description
-10
-12
Unit
JEDEC
Standard
t
AVAV
t
WC
Write Cycle Time
Min.
100
120
ns
t
AVWL
t
AS
Address Setup Time
Min.
0
0
ns
t
WLAX
t
AH
Address Hold Time
Min.
50
50
ns
t
DVWH
t
DS
Data Setup Time
Min.
50
50
ns
t
WHDX
t
DH
Data Hold Time
Min.
0
0
ns
t
OES
Output Enable Setup Time
Min.
0
0
ns
t
OEH
Output
Enable
Hold Time
Read
Min.
0
0
ns
Toggle and Data Polling
Min.
10
10
ns
t
GHWL
t
GHWL
Read Recover Time Before Write
Min.
0
0
ns
t
ELWL
t
CS
CE Setup Time
Min.
0
0
ns
t
WHEH
t
CH
CE Hold Time
Min.
0
0
ns
t
WLWH
t
WP
Write Pulse Width
Min.
50
50
ns
t
WHWL
t
WPH
Write Pulse Width High
Min.
30
30
ns
t
WHWH1
t
WHWH1
Byte Programming Operation
Typ.
8
8
μ
s
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 1)
Typ.
1
1
sec
t
VCS
V
CC
Setup Time
Min.
50
50
μ
s
t
VLHT
Voltage Transition Time (Note 2)
Min.
4
4
μ
s
t
WPP
Write Pulse Width (Note 2)
Min.
100
100
μ
s
t
OESP
OE Setup Time to WE Active (Note 2)
Min.
4
4
μ
s
t
CSP
CE Setup Time to WE Active (Note 2)
Min.
4
4
μ
s
t
RB
Recover Time From RY/BY
Min.
0
0
ns
t
RP
RESET Pulse Width
Min.
500
500
ns
t
RH
RESET Hold Time Before Read
Min.
50
50
ns
t
BUSY
Program/Erase Valid to RY/BY Delay
Min.
90
90
ns
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