參數(shù)資料
型號: MBM29LV080-15
廠商: Fujitsu Limited
英文描述: 8M (1M ×8) Bit Flash Memory(8M (1M ×8)位 單5V 電源電壓閃速存儲器)
中文描述: 8米(1米× 8)位閃存(8米(1米× 8)位單5V的電源電壓閃速存儲器)
文件頁數(shù): 29/44頁
文件大?。?/td> 420K
代理商: MBM29LV080-15
29
MBM29LV080
-10/-12/-15
t
WS
t
GHEL
t
WH
t
WHWH1
t
WC
WE
OE
Addresses
Data
t
CP
t
CPH
t
AH
t
DS
t
DH
DQ
7
PD
A
0H
D
OUT
CE
XXXXH
PA
PA
Data Polling
3rd Bus Cycle
t
AS
Figure 8
Alternate CE Controlled Program Operation Timing
Notes: 1. PA is address of the memory location to be programmed.
2. PD is data to be programmed at byte address.
3. DQ
7
is the output of the complement of the data written to the device.
4. D
OUT
is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
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