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參數(shù)資料
| 型號： | MBM29LV080-15 |
| 廠商： | Fujitsu Limited |
| 英文描述： | 8M (1M ×8) Bit Flash Memory(8M (1M ×8)位 單5V 電源電壓閃速存儲器) |
| 中文描述： | 8米（1米× 8）位閃存（8米（1米× 8）位單5V的電源電壓閃速存儲器） |
| 文件頁數(shù)： | 3/44頁 |
| 文件大小： | 420K |
| 代理商： | MBM29LV080-15 |
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3
MBM29LV080
-10/-12/-15
I
DESCRIPTION
The MBM29LV080 is a 8M-bit, 5.0 V-Only Flash memory organized as 1 M bytes of 8 bits each. The 1 M bytes
of data is divided into 16 sectors of 64 K bytes for flexible erase capability. The 8 bit of data will appear on DQ
to DQ
7
. The MBM29LV080 is offered in a 40-pin TSOP package. This device is designed to be programmed in-
system with the standard system 3.0 V V
CC
supply. A 12.0 V V
The device can also be reprogrammed in standard EPROM programmers.
0
PP
is not required for program or erase operations.
The standard MBM29LV080 offers access times 100 ns, 120 ns and 150 ns allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE),
write enable (WE), and output enable (OE) controls.
The MBM29LV080 is command set compatible with JEDEC standard E
command register using standard microprocessor write timings. Register contents serve as input to an internal
state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses
and data needed for the programming and erase operations. Reading data out of the device is similar to reading
from 12.0 V Flash or EPROM devices.
2
PROMS. Commands are written to the
The MBM29LV080 is programmed by executing the program command sequence. This will invoke the Embedded
Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies
proper cell margin. Each sector can be programmed and verified in about 0.6 seconds. Erase is accomplished
by executing the erase command sequence. This will invoke the Embedded Erase Algorithm which is an internal
algorithm that automatically preprograms the array if it is not already programmed before executing the erase
operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin.
This device also features a sector erase architecture. The sector erase mode allows for sectors of memory to
be erased and reprogrammed without affecting other sectors. A sector is typically erased and verified within one
second. (If already completely preprogrammed.) The MBM29LV080 is erased when shipped from the factory.
The MBM29LV080 device also features hardware sector group protection. This feature will disable both program
and erase operations in any combination of sixteen sector groups of memory.
Fujitsu has implemented an Erase Suspend feature that enables the user to put erase on hold for any period of
time to read data from or program data to a non-busy sector. Thus, true background erase can be achieved.
The device features single 3.0 V power supply operation for both read and program functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low V
inhibits write operations during power transitions. The end of program or erase is detected by Data Polling of
DQ
7
, or by the Toggle Bit I feature on DQ
6
or the RY/BY output pin. Once the end of a program or erase cycle
has been completed, the device automatically resets to the read mode.
CC
detector automatically
The MBM29LV080 also has a hardware RESET pin. When this pin is driven low, execution of any Embedded
Program or Embedded Erase operations will be terminated. The internal state machine will then be reset into
the read mode. The RESET pin may be tied to the system reset circuity. Therefore, if a system reset occurs
during the Embedded Program or Embedded Erase operation, the device will be automatically reset to a read
mode. This will enable the system microprocessor to read the boot-up firmware from the Flash memory.
Fujitsu’s Flash technology combines years of EPROM and E
of quality, reliability, and cost effectiveness. The MBM29LV080 memory electrically erases all bits within a sector
simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte at a time using the EPROM
programming mechanism of hot electron injection.
2
PROM experience to produce the highest levels
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PDF描述 |
|---|---|
| MBM29LV080A | Audio codec with touch screen controller and power management monitor |
| MBM29LV080A-12 | 8M (1M x 8) BIT |
| MBM29LV080A-12PTR | 8M (1M x 8) BIT |
| MBM29LV080A-70PTR | Low-cost stereo filter DAC |
| MBM29LV080A-70PTV | Low power audio DAC with PLL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBM29LV080A | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M x 8) BIT |
| MBM29LV080A-12 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M x 8) BIT |
| MBM29LV080A-12PTR | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M x 8) BIT |
| MBM29LV080A-12PTV | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M x 8) BIT |
| MBM29LV080A-70 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M x 8) BIT |
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