參數(shù)資料
型號: MBM29LV080
廠商: Fujitsu Limited
英文描述: CMOS 8M SON Packages Flash Memory(CMOS 8M小外形封裝閃存)
中文描述: 800萬的CMOS封裝閃存兒子的CMOS(800萬小外形封裝閃存)
文件頁數(shù): 3/11頁
文件大?。?/td> 132K
代理商: MBM29LV080
3
MBM29F017/MBM29LV002/MBM29LV004/MBM29LV400/
MBM29LV080/MBM29LV008/MB29LV800
I
FEATURES
Mounted on chip size package
SON-40 Package dimensions: 10.00
SON-46 Package dimensions: 10.00
Single 3 V flash memory (2 M, 4 M, 8 M)
Single 5 V flash memory (16 M)
Automatic program
Built-in erase suspend/resume
Data polling, and toggle bit feture for detection of program or erase cycle completion
Ready-Busy output (Hardware Method for detector of program or erase cycle completion)
Easy memory expansion by output enable pin
Hardware reset and standby functions by RESET pin
Compatible with JEDEC-standard commands
Minimum 100,000 write/erase cycles
Sector erase architecture (any combination of sectors can be concurrently erased.)
Sector protection
Temporary sector unprotection
Boot code sector architecture (boot type only)
Automatic Sleep Mode (3 V packages only)
Address Don’t Care during programming (MBM29F017, MBM29LV080 only)
×
×
10.75
12.00
×
×
0.75 mm (lead pitch: 0.5 mm)
0.75 mm (lead pitch: 0.5 mm)
TM
algorithm (Embedded
TM
Algorithm)
Embedded
TM
Algorithm is a trademark of Advanced Micro Device, Inc.
相關(guān)PDF資料
PDF描述
MBM29LV400 CMOS 4M SON Packages Flash Memory(CMOS 4M小外形封裝閃存)
MBM29LV800 CMOS 8M SON Packages Flash Memory(CMOS 8M小外形封裝閃存)
MBM29LV002 CMOS 2 M SON Packages Flash Memory(CMOS 2M 小外形封裝閃速存儲器)
MBM29LV008 CMOS 8M SON Packages Flash Memory(CMOS 8M小外形封裝閃存)
MBM29F017 CMOS 16 M SON Packages Flash Memory(CMOS 16M小外形封裝閃存)
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