參數(shù)資料
型號: MBM29PDS322TE11
廠商: Fujitsu Limited
英文描述: 32M (2M x 16) BIT Page Dual Operation
中文描述: 32M的(2米× 16)位頁雙操作
文件頁數(shù): 30/66頁
文件大小: 694K
代理商: MBM29PDS322TE11
MBM29PDS322TE/BE
10/11
30
DQ
7
Data Polling
The device features Data Polling as a method to indicate to the host that the Embedded Algorithms are in
progress or completed. During the Embedded Program Algorithm an attempt to read device will produce a
complement of data last written to DQ
7
. Upon completion of the Embedded Program Algorithm, an attempt to
read device will produce true data last written to DQ
7
. During the Embedded Erase Algorithm, an attempt to read
device will produce a “0” at the DQ
7
output. Upon completion of the Embedded Erase Algorithm an attempt to
read device will produce a “1” on DQ
7
. The flowchart for Data Polling (DQ
7
) is shown in Figure 23.
For programming, the Data Polling is valid after the rising edge of the fourth write pulse in the four write pulse
sequence.
For chip erase and sector erase, the Data Polling is valid after the rising edge of the sixth write pulse in the six
write pulse sequence. Data Polling must be performed at sector address of sectors being erased, not protected
sectors. Otherwise, the status may be invalid.
If a program address falls within a protected sector, Data Polling on DQ
7
is active for approximately 1
μ
s, then
that bank returns to the read mode. After an erase command sequence is written, if all sectors selected for
erasing are protected, Data Polling on DQ
7
is active for approximately 400
μ
s, then the bank returns to read mode.
Once the Embedded Algorithm operation is close to completion, the device data pins (DQ
7
) may change asyn-
chronously while the output enable (OE) is asserted low. This means that device is driving status information
on DQ
7
at one instant of time and then that byte’s valid data at the next instant of time. Depending on when the
system samples the DQ
7
output, it may read the status or valid data. Even if device has completed the Embedded
Algorithm operation and DQ
7
has a valid data, data outputs on DQ
0
to DQ
6
may be still invalid. The valid data
on DQ
0
to DQ
7
will be read on the successive read attempts.
The Data Polling feature is active only during the Embedded Programming Algorithm, Embedded Erase Algorithm
or sector erase time-out. (See Table 9.)
See Figure 10 for the Data Polling timing specifications and diagrams.
DQ
6
Toggle Bit I
The device also features the “Toggle Bit I” as a method to indicate to the host system that the Embedded
Algorithms are in progress or completed.
During Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from the
device will results in DQ
6
toggling between one and zero. Once the Embedded Program or Erase Algorithm cycle
is completed, DQ
6
will stop toggling and valid data will be read on the next successive attempts. During pro-
gramming, the Toggle Bit I is valid after the rising edge of the fourth write pulse in the four write pulse sequence.
For chip erase and sector erase, the Toggle Bit I is valid after the rising edge of the sixth write pulse in the six
write pulse sequence. The Toggle Bit I is active during the sector time out.
In programming, if the sector being written is protected, the toggle bit will toggle for about 1
μ
s and then stop
toggling with data unchanged. In erase, device will erase all selected sectors except for ones that are protected.
If all selected sectors are protected, the chip will toggle the toggle bit for about 400 μs and then drop back into
read mode, having data unchanged.
Either CE or OE toggling will cause DQ
6
to toggle. In addition, an Erase Suspend/Resume command will cause
DQ
6
to toggle.
The system can use DQ
6
to determine whether a sector is actively erased or is erase-suspended. When a bank
is actively erased (that is, the Embedded Erase Algorithm is in progress), DQ
6
toggles. When a bank enters the
Erase Suspend mode, DQ
6
stops toggling. Successive read cycles during erase-suspend-program cause DQ
6
to toggle.
To operate toggle bit function properly, CE or OE must be high when bank address is changed.
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