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參數(shù)資料
| 型號： | MBM29PDS322TE11PBT |
| 廠商： | FUJITSU LTD |
| 元件分類： | DRAM |
| 英文描述： | 32M (2M x 16) BIT Page Dual Operation |
| 中文描述： | 2M X 16 FLASH 1.8V PROM, 115 ns, PBGA63 |
| 封裝： | PLASTIC, FBGA-63 |
| 文件頁數(shù)： | 1/66頁 |
| 文件大?。?/td> | 694K |
| 代理商： | MBM29PDS322TE11PBT |
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DS05-20889-1E
FUJITSU SEMICONDUCTOR
DATA SHEET
FLASH MEMORY
CMOS
32M (2M
×
16) BIT
Page Dual Operation
MBM29PDS322TE/BE
10/11
I
DESCRIPTION
The MBM29PDS322TE/BE is 32M-bit, 1.8 V-only Flash memory organized as 2M words of 16 bits each. The
device is offered in 63-ball FBGA package. This device is designed to be programmed in system with standard
system 1.8 V V
CC
supply. 12.0 V V
PP
and 5.0 V V
CC
are not required for write or erase operations. The device can
also be reprogrammed in standard EPROM programmers.
The device is organized into two banks, Bank 1 and Bank 2, which can be considered to be two separate memory
arrays as far as certain operations are concerned. This device is the same as Fujitsu’s standard 1.8 V only Flash
memories with the additional capability of allowing a normal non-delayed read access from a non-busy bank of
the array while an embedded write (either a program or an erase) operation is simultaneously taking place on the
other bank.
(Continued)
I
PRODUCT LINE-UP
I
PACKAGE
Part No.
MBM29PDS322TE/BE
Ordering Part No.
V
CC
= 2.0 V
+0.2 V
–0.2 V
10
11
Max. Random Address Access Time (ns)
100
115
Max. Page Address Access Time (ns)
45
45
Max. CE Access Time (ns)
100
115
Max. OE Access Time (ns)
35
45
63-ball plastic FBGA
(BGA-63P-M01)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBM29PDS322BE10 | 32M (2M x 16) BIT Page Dual Operation |
| MBM29PDS322BE10PBT | NEOZED TYPE,400V.10A |
| MBM29PDS322BE11 | 32M (2M x 16) BIT Page Dual Operation |
| MBM29PDS322BE11PBT | 32M (2M x 16) BIT Page Dual Operation |
| MBM29PL160TD | 16M (2M x 8/1M x 16) BIT |
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