參數(shù)資料
型號: MBM29PL160BD-90PFTN
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 16M (2M x 8/1M x 16) BIT
中文描述: 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝: PLASTIC, TSOP1-48
文件頁數(shù): 40/51頁
文件大?。?/td> 591K
代理商: MBM29PL160BD-90PFTN
40
MBM29PL160TD
-75/-90
/MBM29PL160BD
-75/-90
Figure 17 Embedded Erase
TM
Algorithm
* :The sequence is applied for
×
16 mode.
The addresses differ from
×
8 mode.
555H/AAH
2AAH/55H
555H/AAH
555H/80H
555H/10H
2AAH/55H
555H/AAH
2AAH/55H
555H/AAH
555H/80H
2AAH/55H
Additional sector
erase commands
are optional.
Write Erase Command
Sequece
(See Below)
Data Polling or Toggle Bit
from Device
Erasure Completed
Chip Erase Command Sequence*
(Address/Command):
Individual Sector/Multiple Sector*
Erase Command Sequence
(Address/Command):
Sector Address/30H
Sector Address/30H
Sector Address/30H
Start
Data = FFH
No
Yes
相關(guān)PDF資料
PDF描述
MBM29PL160BD-90PFTR 16M (2M x 8/1M x 16) BIT
MBM29PL160BD 16M (2M x 8/1M x 16) BIT
MBM29PL160TD-75 122 x 32 pixel format, LED Backlight available
MBM29PL160TD-75PF 122 x 32 pixel format, LED Backlight available
MBM29PL160TD-75PFTN 122 x 32 pixel format, LED Backlight available
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