參數(shù)資料
型號: MBR2545CTP
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Schottky Barrier Power Rectifier(30A,45V肖特基勢壘功率整流器)
中文描述: 30 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝: PLASTIC, CASE 221A, 4 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 38K
代理商: MBR2545CTP
Semiconductor Components Industries, LLC, 2000
December, 2000 – Rev. 1
1
Publication Order Number:
MBR2545CTP/D
MBR2545CTP
SWITCHMODE
Power Rectifier
. . . using the Schottky Barrier principle with a platinum barrier
metal. These state–of–the–art devices have the following features:
Guardring for Stress Protection
Low Forward Voltage
150
°
C Operating Junction Temperature
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260
°
C Max. for 10 Seconds
Shipped 50 units per plastic tube
Marking: B2545P
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
45
V
Average Rectified Forward Current
(Rated V
R
, T
C
= 130
°
C)
I
F(AV)
30
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz,
T
C
= 130
°
C)
Per Diode Leg
I
FRM
30
A
Non–Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
Per Diode Leg
I
FSM
150
A
Peak Repetitive Reverse Surge
Current (2.0 s, 1.0 kHz)
I
RRM
1.0
A
Storage Temperature Range
T
stg
–65 to +175
°
C
Operating Junction Temperature
T
J
–65 to +150
°
C
Voltage Rate of Change (Rated V
R
)
dv/dt
10,000
V/ s
Device
Package
Shipping
ORDERING INFORMATION
MBR2545CTP
TO–220
http://onsemi.com
CASE 221A
TO–220AB
PLASTIC
50 Units/Rail
3
4
1
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES
45 VOLTS
1
3
2, 4
2
MARKING DIAGRAM
B2545P
LLYWW
B2545P= Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
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