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參數(shù)資料
| 型號(hào)： | MBR3035WTPBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Diode Schottky 35V 30A 3-Pin(3+Tab) TO-247AC |
| 中文描述： | Schottky (Diodes & Rectifiers) 30 Amp 35 Volt |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 83K |
| 代理商： | MBR3035WTPBF |
MBR30H35PT thru MBR30H60PT
Vishay General Semiconductor
www.vishay.com
Revision: 21-Nov-12
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 88792
Dual Common-Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Solder dip 275 °C max.10 s, per JESD 22-B106
Material categorization: For definitions of compliance
please see
www.vishay.com/doc99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters or polarity protection application.
MECHANICAL DATA
Case:
TO-247AD (TO-3P)
Molding compound meets UL 94V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
Note
(1)
2.0 μs pulse width, f = 1.0 kHz
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
J
max.
30 A
35 V, 60 V
200 A
0.58 V, 0.63 V
150 μA
175 °C
PIN 1
PIN 3
CASE
PIN 2
TO-247AD (TO-3P)
1
2
3
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR30H35PT MBR30H45PT MBR30H50PT MBR30H60PT
UNIT
Maximum repetitive peak reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (Fig. 1)
Non-repetitive avalanche energy per diode at 25 °C,
I
AS
= 1.5 A, L = 10 mH
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Peak repetitive reverse surge current per diode
Peak non-repetitive reverse energy (8/20 μs waveform)
Electrostatic discharge capacitor voltage human body
model: C = 100 pF, R = 1.5
Voltage rate of change (rated V
R
)
Operating junction temperature range
Storage temperature range
V
RRM
V
RWM
V
DC
I
F(AV)
35
35
35
45
45
45
50
50
50
60
60
60
V
V
V
A
30
E
AS
80
mJ
I
FSM
200
A
I
RRM (1)
E
RSM
2.0
30
1.0
20
A
mJ
V
C
mJ
dV/dt
T
J
T
STG
10 000
- 65 to + 175
- 65 to + 175
V/μs
°C
°C
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| MBR4060WTPBF | Diode Schottky 60V 40A 3-Pin(3+Tab) TO-247AC |
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| MBR4045CTPBF | Diode Schottky 45V 40A 3-Pin(3+Tab) TO-220AB |
| MBR745PBF | Diode Schottky 45V 7.5A 3-Pin(3+Tab) TO-262 Tube |
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參數(shù)描述 |
|---|---|
| MBR3035WTPBF_12 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A |
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