參數(shù)資料
型號: MBR3035WTPBF
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Diode Schottky 35V 30A 3-Pin(3+Tab) TO-247AC
中文描述: Schottky (Diodes & Rectifiers) 30 Amp 35 Volt
文件頁數(shù): 3/4頁
文件大?。?/td> 83K
代理商: MBR3035WTPBF
MBR30H35PT thru MBR30H60PT
Vishay General Semiconductor
www.vishay.com
Revision: 21-Nov-12
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
3
Document Number: 88792
Fig. 3 -
Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 -
Typical Reverse Characteristics Per Diode
Fig. 5 -
Typical Junction Capacitance Per Diode
Fig. 6 -
Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
0.01
0.1
0.1
0.2
Instantaneo
u
s For
w
ard Voltage (V)
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
10
100
MBR30H35PT - MBR30H45PT
MBR30H50PT - MBR30H60PT
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
I
u
s
w
a
u
r
60
40
20
0
100
80
0.0001
0.001
0.1
0.01
1
10
100
MBR30H35PT - MBR30H45PT
MBR30H50PT - MBR30H60PT
Percent of Rated Peak Re
v
erse Voltage (%)
I
u
s
v
e
C
u
r
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
1
100
10
1000
100
10 000
Re
v
erse Voltage (V)
J
u
n
T
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
0.01
0.1
t - P
u
lse D
u
ration (s)
0.1
1
1
10
10
T
PI
N
1
PI
N
3
CASE
PI
N
2
TO-247AD (TO-3P)
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.142 (3.6)
0.138 (3.5)
(4.3)
0.086 (2.18)
0.076 (1.93)
0.160 (4.1)
0.140 (3.5)
0.225 (5.7)
0.205 (5.2)
0.127 (3.22)
0.117 (2.97)
0.048 (1.22)
0.044 (1.12)
0.795 (20.2)
0.775 (19.6)
0.840 (21.3)
0.820 (20.8)
1
2
3
0.078 (1.98) REF.
0.203 (5.16)
0.193 (4.90)
10° TYP.
Both Sides
30°
10
1° REF.
Both Sides
0.030 (0.76)
0.020 (0.51)
0.118 (3.0)
0.108 (2.7)
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