參數(shù)資料
型號: MBRB2535CTTRRP
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Diode Schottky 35V 30A 3-Pin(2+Tab) D2PAK T/R
中文描述: Schottky (Diodes & Rectifiers) 25 Amp 35 Volt Common Cathode
文件頁數(shù): 1/5頁
文件大?。?/td> 129K
代理商: MBRB2535CTTRRP
Document Number: 88675
Revision: 15-Jun-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
MBR(F,B)2535CT thru MBR(F,B)2560CT
Vishay General Semiconductor
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AB and ITO-220AB
package)
Complant to RoHS 2002/95/EC and in accordance to
WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94 V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class 1A
whisker test, HE3 suffix for high reliability grade (AEC-Q101
qualified), meets JESD 201 class 2 whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 12.5 A
V
RRM
35 V to 60 V
I
FSM
150 A
V
F
0.73 V at 30 A, 0.65 V at 15 A
T
J
max.
150 °C
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR25xxCT
ITO-220AB
MBRF25xxCT
MBRB25xxCT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
TO-263AB
PIN 2
PIN 1
PIN 3
123
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR2535CT MBR2545CT MBR2550CT MBR2560CT
UNIT
Maximum repetitive peak reverse voltage
V
RRM
35
45
50
60
V
Working peak reverse voltage
V
RWM
35
45
50
60
Maximum DC blocking voltage
V
DC
35
45
50
60
Maximum average forward rectified current
at T
C
= 130 °C
total device
I
F(AV)
25
A
per diode
12.5
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
150
A
Peak repetitive reverse surge current per diode
at t
p
= 2 μs, 1 kHz
I
RRM
1.0
0.5
Peak non-repetitive reverse energy (8/20 μs waveform)
per diode
E
RSM
25
mJ
Electrostatic discharge capacitor voltage human body
model: C = 100 pF, R = 1.5 k
Ω
V
C
25
kV
Voltage rate of change (rated V
R
)
dV/dt
10 000
V/μs
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