參數(shù)資料
型號: MBRD1040-T
廠商: DIODES INC
元件分類: 參考電壓二極管
英文描述: 10A LOW VF SCHOTTKY BARRIER RECTIFIER
中文描述: 10 A, 40 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC, DPAK-3
文件頁數(shù): 1/3頁
文件大?。?/td> 62K
代理商: MBRD1040-T
Note:
Pins 1 & 3 must be electrically
connected at the printed circuit board.
DS30282 Rev. 3 - 2
1 of 3
MBRD1040
MBRD1040
10A LOW VF SCHOTTKY BARRIER RECTIFIER
Features
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Maximum Junction Temperature Rating
Very Low Forward Voltage Drop
Very Low Leakage Current
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Case: DPAK Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking Information: See Page 2
Weight: 0.4 grams (approx.)
Mechanical Data
B
C
D
E
G
H
J
K
L
M
A
P
4
1
2
3
PIN 1
PIN 3
PIN 4, BOTTOMSIDE
HEAT SINK
Characteristic
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Typical Thermal Resistance Junction to Case
Typical Thermal Resistance Junction to Ambient
Operating Temperature Range
Storage Temperature Range
40
V
28
10
V
A
(Also see Figure 4)
I
FSM
100
A
R
JC
R
JA
T
j
T
STG
6.0
80
C/W
C/W
C
°C
-65 to +150
-65 to +150
N
Maximum Ratings
@ T
A
= 25 C unless otherwise specified
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
V
(BR)R
Min
Typ
Max
Unit
Test Condition
I
R
= 1mA
I
F
= 8A, T
S
= 25 C
I
F
= 8A, T
S
= 125 C
I
F
= 10A, T
S
= 25 C
T
S
= 25 C, V
R
= 35V
T
S
= 100 C, V
R
= 35V
f = 1.0MHz, V
R
= 4.0V DC
Reverse Breakdown Voltage (Note 1)
40
V
Forward Voltage (Note 1)
V
FM
0.45
0.47
0.1
12.5
700
0.49
0.41
0.51
0.3
25
V
Peak Reverse Current (Note 1)
I
RM
mA
Junction Capacitance
C
j
pF
Notes:
1. Short duration test pulse used to minimize self-heating effect.
DPAK
Min
Dim
A
B
C
D
E
G
H
J
K
L
M
P
All Dimensions in mm
Max
6.3
6.7
10
0.3
0.8
2.3 Nominal
2.1
2.5
0.4
0.6
1.2
1.6
5.3
5.7
0.5 Nominal
1.3
1.8
1.0
5.1
5.5
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