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參數(shù)資料
| 型號： | MBRM120LT3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Surface Mount Schottky Power Rectifier |
| 中文描述： | 1 A, 20 V, SILICON, SIGNAL DIODE, DO-216AA |
| 封裝： | LEAD FREE, PLASTIC, CASE 457-04, POWERMITE-2 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 72K |
| 代理商： | MBRM120LT3G |
MBRM120L
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20
V
Average Rectified Forward Current (At Rated V
R
, T
C
= 135
°
C)
I
O
1.0
A
Peak Repetitive Forward Current
(At Rated V
R
, Square Wave, 100 kHz, T
C
= 135
°
C)
I
FRM
2.0
A
NonRepetitive Peak Surge Current
(NonRepetitive peak surge current, halfwave, single phase, 60 Hz)
I
FSM
50
A
Storage Temperature
T
stg
55 to 150
°
C
Operating Junction Temperature
T
J
55 to 125
°
C
Voltage Rate of Change (Rated V
R
, T
J
= 25
°
C)
THERMAL CHARACTERISTICS
dv/dt
10,000
V/ s
Thermal Resistance, JunctiontoLead (Anode) (Note 1)
Thermal Resistance, JunctiontoTab (Cathode) (Note 1)
Thermal Resistance, JunctiontoAmbient (Note 1)
R
tjl
R
tjtab
R
tja
35
23
277
°
C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10.
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2
V
F
T
J
= 25
°
C
T
J
= 85
°
C
V
(I
F
= 0.1 A)
(I
F
= 1.0 A)
(I
F
= 3.0 A)
0.34
0.45
0.65
0.26
0.415
0.67
Maximum Instantaneous Reverse Current (Note 2), See Figure 4
I
R
T
J
= 25
°
C
T
J
= 85
°
C
mA
(V
R
= 20 V)
(V
R
= 10 V)
2. Pulse Test: Pulse Width
≤
250 s, Duty Cycle
≤
2%.
0.40
0.10
25
18
I
F
,
i
F
,
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
0.1
v
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
1.0
V
F
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
0.1
0.7
0.3
0.5
0.9
T
J
= 85
°
C
T
J
= 125
°
C
T
J
= 40
°
C
T
J
= 25
°
C
0.1
10
1.0
0.1
0.7
0.3
0.5
0.9
T
J
= 85
°
C
T
J
= 125
°
C
T
J
= 25
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBRM120LT3G | 制造商:ON Semiconductor 功能描述:Schottky Rectifier |
| MBRM130L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Surface Mount Schottky Power Rectifier |
| MBRM130L_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Surface Mount Schottky Power Rectifier |
| MBRM130LT1 | 功能描述:肖特基二極管與整流器 1A 30V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRM130LT1G | 功能描述:肖特基二極管與整流器 1A 30V Low Vf RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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